Method for preparing multi-wavelength silica-based hybrid laser array by changing width of silicon waveguide

Abstract

The invention discloses a method for preparing a multi-wavelength silica-based hybrid laser array by changing the width of a silicon waveguide. The method comprises the following steps of: manufacturing a uniform grating on a top silicon layer of a silicon-on-insulator (SOI) wafer; etching a plurality of silicon waveguides with different widths and silicon retaining walls on the two sides in the direction vertical to the grating on the silicon layer; evaporating metal layers in the areas, far away from the outside of the silicon waveguides, of the manufactured two silicon retaining walls, and forming an excessive metal accommodating area between each silicon retaining wall and each metal layer to form an SOI waveguide structure; growing a III-V-group semiconductor laser array structure on a P-substrate by adopting a metal organic chemical vapor deposition (MOCVD) method, wherein each laser in the III-V-group semiconductor laser array structure corresponds to each silicon waveguide; manufacturing a metal electrode on the N-surface of the III-V-group semiconductor laser array structure, and etching an optical coupling window in the metal electrode; manufacturing a metal electrode on the back surface of the P-substrate to form a bonded laser array structure; and bonding the SOI waveguide structure and the bonded laser array structure by adopting a selected area metal bonding method to finish the preparation of the multi-wavelength silica-based hybrid laser array.

Description

technical field [0001] The invention belongs to the field of electronic devices, and in particular relates to a method for preparing a multi-wavelength silicon-based hybrid laser array by changing the width of a silicon waveguide. The manufacturing process is simple, the cost is low, and the reliability is high. Background technique [0002] In recent years, with the maturity of silicon photonics discrete devices, silicon-based optical interconnection has gradually become a research hotspot. Silicon-based laser is the most difficult in optical interconnect devices, so it has attracted people's attention. In a broad sense, silicon-based light sources can be divided into silicon-based light sources and other light-emitting materials and silicon mixed light sources according to different luminescent materials. Silicon material system light sources include nano-silicon system light sources and silicon-based Raman lasers, but none of them can achieve electrically pumped lasers....

AI Technical Summary

Problems solved by technology

The direct bonding scheme requires high process alignment accuracy, and the grating is fabricated by electron beam exposure method, which increases the production cost and process difficulty

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