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A kind of preparation method of ni-cr magnetron sputtering target material

A magnetron sputtering and ni-cr technology, which is applied in the field of Ni-Cr magnetron sputtering target preparation, can solve the problems of poor density, poor grain size and distribution uniformity, and coarse grains, etc. Excellent density, uniform size distribution, and high purity

Active Publication Date: 2014-10-15
NANJING DAMAI SCI&TECH IND CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]Technical problem to be solved: the present invention aims at the current domestic Ni-Cr magnetron sputtering target with generally coarse grains, poor density, uniform grain size and distribution In view of the shortcomings such as poor performance, a method for preparing a Ni-Cr magnetron sputtering target is provided. The characteristics of the preparation method are: adding rare earth elements during the smelting process, refining the Ni-Cr alloy grains and improving its uniformity , by increasing the amount of forging deformation and rolling deformation during forging and rolling to further refine the grains, so as to obtain high quality with excellent density, adjustable grain size within the range of no more than 80 μm, and uniform size distribution Ni-Cr target

Method used

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  • A kind of preparation method of ni-cr magnetron sputtering target material

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Embodiment 1

[0025] The preparation method of Ni-Cr magnetron sputtering target material, its method step is as follows:

[0026] 1. Raw material preparation: take electrolytic nickel with a purity of 99.96%, metal chromium with a purity of 99.09%, and 0.52kg of rare earth;

[0027] 2. Vacuum smelting: remove dirt and oxides on the surface of nickel and chromium plates and weigh them dry. According to the weight ratio of Ni and Cr of 4:1, 103.76kg of electrolytic nickel and 26.24kg of metal chromium are weighed, and the melting temperature is 1450- 1550°C, smelting time is 60min, the ambient vacuum is lower than 8Pa during the smelting process, and 0.4wt.% rare earth elements are added under vacuum and argon protective atmosphere before the furnace is released;

[0028] 3. Pouring: Pouring under vacuum and argon protective atmosphere, demoulding 40 minutes after pouring, cutting off the riser, removing the surface oxide skin, the processed ingot is a round platform, the diameter of the sma...

Embodiment 2

[0034] The preparation method steps of the Ni-Cr magnetron sputtering target are the same as in Example 1, wherein the addition of rare earth elements in step 2 is changed to 0.2wt.%, and the obtained Ni-Cr target grain size is less than 30 μm, and the size distribution Uniform, the metallographic picture is attached figure 2 .

Embodiment 3

[0036] The steps of the preparation method of the Ni-Cr magnetron sputtering target are the same as in Example 1, wherein the addition of rare earth elements in step 2 is changed to 0.05wt.%, and the grain size of the obtained Ni-Cr target is less than 25 μm, and the size distribution Uniform, the metallographic picture is attached image 3 .

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Abstract

A kind of preparation method of Ni-Cr magnetron sputtering target material, its target material composition is 80wt.%Ni and 20wt.%Cr, prepares through processes such as vacuum smelting, pouring, hot forging, rolling, annealing, machining, The raw materials used are electrolytic nickel with a purity of 99.96%, metal chromium with a purity of 99.09%, and a small amount of rare earth, wherein the composition of the rare earth is 34.1wt.%La, 65.74wt%Ce and a small amount of impurities. ~0.4wt.% rare earth elements, and change the forging deformation and rolling deformation (47.4~80.0%) to obtain high-quality Ni with high density, adjustable grain size within the range of no more than 80μm and uniform size distribution -Cr target. Using the Ni-Cr target material prepared by the present invention can effectively improve the quality of the Ni-Cr film and the film deposition rate, and the target material can be used to make thin-film resistors, thin-film resistance strain gauges, solar spectrum selective absorption films, and low-radiation coated glass etc., its products can be widely used in electronics, energy, construction and other industrial fields.

Description

technical field [0001] The invention relates to a method for preparing a Ni-Cr magnetron sputtering target, belonging to the field of metal functional materials. Background technique [0002] The target is the basic consumable that must be used in the sputtering coating process. It is the key material in the magnetron sputtering coating technology. The performance of the film is closely related to the quality of the target. In order to ensure the quality of the deposited film and improve the sputtering efficiency, the quality of the target must be strictly controlled. Target density, grain size and uniformity are important factors affecting the quality of the target. The high-density target has the advantages of electrical conductivity, good thermal conductivity, and high strength. Using this target for coating, the sputtering power is small, the film formation rate is high, and the film is not easy to crack. The denser the target, the weaker the discharge phenomenon and t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23P15/00C22C1/02C22C19/05
Inventor 吴宇宁王泽华王刚江少群徐海斌
Owner NANJING DAMAI SCI&TECH IND CO LTD