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Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer

A technology with high electron mobility and gradual change in composition, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that affect the application potential of GaNHEMT in the direction of high power, the decrease of device output power, and the decrease of efficiency, so as to reduce the self-heating effect, Effect of reducing dislocations and improving thermal conductivity

Inactive Publication Date: 2013-03-13
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low thermal conductivity of the AlGaN buffer layer, the output current of the device decreases with the increase of the drain bias voltage, resulting in a decrease in the output power of the device and a decrease in efficiency, which affects the application potential of GaN HEMT in the direction of high power

Method used

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  • Nitride high electronic mobility transistor extension structure of component gradually-changed ALyGal-yN buffer layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1) Select a sapphire substrate and grow it using MOCVD technology;

[0016] 2) Baking at 1080°C and 100Torr in a hydrogen atmosphere for 5 minutes;

[0017] 3) Cool down to 550°C, inject ammonia gas and trimethylgallium, and grow a 20nm thick GaN nucleation layer on the substrate surface;

[0018] 4) Introduce ammonia, trimethylaluminum and trimethylgallium to grow 2.0um thick composition gradient Al y Ga 1-y N, Al composition y gradually changes from 0 to 0.04 from bottom to top;

[0019] 5) Turn off trimethylaluminum, grow 200nm thick GaN channel layer at 1080°C;

[0020] 6) Open trimethylaluminum again, and grow a 25nm thick AlGaN barrier layer;

[0021] 7) Cool down to room temperature.

Embodiment 2

[0023] 1) Select the SiC substrate and grow it using MOCVD technology;

[0024] 2) Baking at 1080°C and 100Torr in a hydrogen atmosphere for 10 minutes;

[0025] 3) At 1150°C, inject ammonia gas and trimethylaluminum, and grow a 50nm thick AlN nucleation layer on the substrate surface;

[0026] 4) Introduce ammonia, trimethylaluminum and trimethylgallium to grow 2.5um thick composition gradient Al y Ga 1-y N, Al composition gradually changes from 0 to 0.05 from bottom to top;

[0027] 5) Turn off trimethylaluminum, grow 100nm thick GaN channel layer at 1080°C;

[0028] 6) Open trimethylaluminum again, grow 1nm thick AlN and 20nm thick AlGaN barrier layer at 1080°C;

[0029] 7) Cool down to room temperature.

Embodiment 3

[0031] 1) Select a single crystal Si substrate and grow it using MOCVD technology;

[0032] 2) Baking at 1100°C and 100Torr in a hydrogen atmosphere for 10 minutes;

[0033] 3) Lower the temperature to 1060°C, pass through trimethylaluminum for 30 seconds, and form an Al layer on the surface of the Si substrate;

[0034] 4) A 300nm-thick AlN nucleation layer is grown by injecting ammonia gas and trimethylaluminum;

[0035] 5) Introduce ammonia, trimethylaluminum and trimethylgallium to grow 2.5um thick composition gradient Al y Ga 1-y N, Al composition y gradually changes from 0 to 0.06 from bottom to top;

[0036] 6) Turn off trimethylaluminum, grow 500nm thick GaN channel layer at 1080°C;

[0037] 7) Open trimethylaluminum again, grow 25nm thick AlGaN barrier layer at 1100°C;

[0038] 8) Cool down to room temperature.

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Abstract

The invention discloses a nitride high electronic mobility transistor extension structure of a component gradually-changed ALyGal-yN buffer layer. A conduction band step can still be formed by using the component gradually-changed ALyGal-yN buffer layer and a GaN channel layer, 2 diethylene glycol (DEG) area limiting can be strengthened, and microwave performance and power characteristics of a device can be improved. The ALyGal-yN buffer layer adopts a structure gradually changing from 0 to y, heat conductivity of the buffer layer can be improved, and self-heating effects of a high electronic mobility transistor (HEMT) device can be effetcivley reduced. Compared with a common constant component ALyGal-yN buffer layer, the component gradually-changed ALyGal-yN buffer layer can effectively reduce defect concentration such as dislocation in the buffer layer and contributes to further promoting of performance and reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor single crystal thin films, in particular to Al x Ga 1-x Nitride High Electron Mobility Transistor Epitaxial Structure with N-Buffer Layer. Background technique [0002] Gallium Nitride (GaN)-based High Electron Mobility Field Effect Transistor (HEMT) is a new type of electronic device based on a nitride heterostructure. The unique polarization effect of nitride materials makes a high Concentrated two-dimensional electron gas (2DEG) channel, through Schottky gate voltage control channel electrons to achieve work. The device has excellent characteristics of high frequency and high power, and is widely used in wireless communication base stations, power electronic devices and other fields such as information transmission and reception, energy conversion, etc., in line with the current development concept of energy saving, environmental protection, green and low carbon; GaN HEMT epitaxial mate...

Claims

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Application Information

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IPC IPC(8): H01L29/201H01L29/778H01L29/06
Inventor 彭大青李忠辉
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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