High-efficiency organic light-emitting diode and fabrication method thereof

A light-emitting diode, high-efficiency technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as reducing the optical coupling output efficiency of the device, and achieve higher efficiency, improved spectral purity, and improved device spectrum. Effect

Inactive Publication Date: 2013-03-20
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the organic light-emitting diode is composed of a multi-layer structure, due to the difference in refractive index between layers and between the device and the air, a large part of the light suffers from total internal reflection when it propagates from a high-refractive-index material to a low-refractive-index material.
The light generated inside the device is thus confined in the device and cannot enter the air, and the light trapped in the device is either in the form of a waveguide or is finally absorbed or radiated from the edge of the substrate, thereby greatly reducing the Optical coupling output efficiency

Method used

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  • High-efficiency organic light-emitting diode and fabrication method thereof
  • High-efficiency organic light-emitting diode and fabrication method thereof
  • High-efficiency organic light-emitting diode and fabrication method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] First clean the glass substrate with DBR, dry it with nitrogen, put the glass in a vacuum oven and bake it at 120 degrees Celsius for 30 minutes, then treat it with oxygen plasma for 2 minutes, and then put the glass in the vacuum coating system. When the vacuum degree of the vacuum coating system reaches 3×10 -4 At the time of Pa, Au with a width of 4 mm and a length of 30 mm was evaporated on a glass substrate with a DBR as an anode. Vapor-deposited on the anode sequentially 2 o 5 hole injection layer of NPB, hole transport layer of NPB, Alq 3 The light-emitting layer and electron transport layer of LiF, the electron injection layer of LiF and the cathode of metal Al, wherein the two electrodes intersect each other to form the light-emitting area of ​​the device, the area of ​​the light-emitting area is 16 square millimeters, the anode, the hole interface layer, the hole transport Layer, light-emitting layer and electron transport layer, electron interface layer a...

Embodiment 2

[0049] First, the ITO anode on the glass substrate with DBR / ITO is photolithographically formed into an electrode with a width of 4 mm and a length of 30 mm, cleaned, dried with nitrogen, and the glass is placed in a vacuum oven and baked at 120 degrees Celsius for 30 minutes. After that, it was treated with oxygen plasma for 2 minutes, after which, the glass was put into a vacuum coating system. When the vacuum degree of the vacuum coating system reaches 3×10 -4 Pa, sequentially vapor-deposit V on the anode 2 o 5 hole injection layer of NPB, hole transport layer of NPB, Alq 3 The light-emitting layer and electron transport layer of LiF, the electron injection layer of LiF and the cathode of metal Al. The intersecting part of the two electrodes forms the light-emitting area of ​​the device. The area of ​​the light-emitting area is 16 square millimeters. The hole interface layer, hole transport layer, The thicknesses of the light-emitting layer and the electron transport lay...

Embodiment 3

[0051] First clean the ordinary glass substrate, dry it with nitrogen, put the glass in a vacuum oven and bake it at 120 degrees Celsius for 30 minutes, then treat it with oxygen plasma for 2 minutes, and then put the glass into the vacuum coating system middle. When the vacuum degree of the vacuum coating system reaches 3×10 -4 At the time of Pa, first vapor-deposit Au with a width of 4 mm and a length of 30 mm on a common glass substrate as an anode. Vapor-deposited on the anode sequentially 2 o 5 hole injection layer of NPB, hole transport layer of NPB, Alq 3 The light-emitting layer and electron transport layer of LiF, the electron injection layer of LiF and the cathode of metal Al, wherein the two electrodes intersect each other to form the light-emitting area of ​​the device, the area of ​​the light-emitting area is 16 square millimeters, the anode, the hole interface layer, the hole transport Layer, light-emitting layer and electron transport layer, electron interfa...

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Abstract

The invention relates to a high-efficiency organic light-emitting diode and a fabrication method of the light-emitting diode. The high-efficiency organic light-emitting diode is fabricated by a microcavity effect and a surface plasma emission method. More particularly, a DBR (Distributed Bragg Reflector) coupling layer is used for generating a microcavity effect, and the method of plasma emission on the surface of a metal electrode is used for achieving the high-efficiency organic light-emitting diode. The high-efficiency organic light-emitting diode is fabricated by the DBR coupling layer and the method of the plasma emission on the surface of the metal electrode, and comprises a substrate, a composite anode, a hole injection layer, a hole transport layer, a luminous layer, an electron transport layer, an electron injection layer and a cathode, or comprises a substrate, a composite cathode, an electron injection layer, an electron transport layer, a luminous layer, a hole transport layer, a hole injection layer and an anode sequentially from the bottom up.

Description

technical field [0001] The invention relates to a method for preparing high-efficiency organic light-emitting diodes by utilizing the microcavity effect and surface plasma emission. More specifically, the present invention relates to a method for realizing a high-efficiency organic light-emitting diode by using a DBR coupling layer to generate a microcavity effect while utilizing plasma emission on the surface of a metal electrode. Background technique [0002] Organic light-emitting diode, English abbreviation OLED, has many advantages such as full solid state, active light emission, high contrast, fast response, wide viewing angle, vivid color, high definition, ultra-thin, easy to flexible display, etc. It is an emerging display in the information field. Technology, following LCD, is considered to be the fastest-growing new flat-panel display technology in the next 20 years, and has been applied to small and medium-sized color displays such as mobile phones, personal data ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/56
Inventor 张宏梅
Owner NANJING UNIV OF POSTS & TELECOMM
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