Method for preparing sub-wavelength silicon nano-wire array with antireflection characteristic
A silicon nanowire array, anti-reflection technology, applied in the nano field, can solve the problems of complex process steps, expensive instruments, limited market application, etc., and achieve the effect of simple process
Active Publication Date: 2013-04-10
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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[0024] a. Use an n-type (100) single wafer with a resistivity of 3 Ω?cm to 5 Ω?cm, ultrasonically clean it in acetone for 10 minutes; then ultrasonically clean it in absolute ethanol for 10 minutes; then rinse it repeatedly with deionized water Clean, then soak in hydrofluoric acid solution with a mass fraction of 5% for 5 minutes; then rinse with deionized water repeatedly, and dry in vacuum;
[0025] b. Using high-vacuum magnetron sputtering technology, a silver film with a network structure is deposited on the surface of the pretreated silicon wafer. The sputtering process parameters were 10 mA sputtering current and 60 s sputtering time;
[0026] c. Immerse the silicon wafer deposited with the silver film in the etching solution, the concentration of hydrofluoric acid in the etching solution is 4.6 mol / L, and the concentration of hydrogen peroxide is 0.5 mol / L. The length of the silicon nanowire array can be tuned by the reaction time. Taking the reaction for 2 minutes a...
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Abstract
The invention belongs to the technical field of nanometer, and particularly relates to a method for preparing a sub-wavelength silicon nano-wire array with antireflection characteristic. The method comprises the following steps: adopting an n-type (100) silicon wafer, depositing a reticular silver film on the surface of the silicon wafer by utilizing a high vacuum magnetron sputtering technology, and then obtaining the sub-wavelength silicon nano-wire array with antireflection characteristics on the silicon surface by utilizing a wet etching technology, wherein the test proves that the reflectivity is less than 1%. According to the method for preparing the sub-wavelength silicon nano-wire array with antireflection characteristics, a silver film-catalyzed silicon-etching technology is utilized for the first time; the method is maskless at normal temperature and normal pressure, easy to operate, and good in repeatability and controllability; new ideas are provided for preparing a super-antireflection silicon surface nano-structure with a sub-wavelength scale; and the material basis is provided for designing and constructing a novel efficient silicon solar cell.
Description
technical field [0001] The invention belongs to the field of nanotechnology, in particular to a method for preparing a sub-wavelength silicon nanowire array with anti-reflection properties. Background technique [0002] Surface anti-reflection technology is an important way to realize the efficiency of silicon solar cells by reducing the reflection loss of incident light on the silicon surface and improving the effective use of incident light energy by silicon solar cells. In the current silicon solar cells, the common silicon surface anti-reflection technology includes depositing single-layer or multi-layer anti-reflection films (eg: SiOx, SiNx) and texturing random pyramid structures. The multilayer anti-reflection coating with weak thermal stability and the pyramidal silicon structure with high reflectivity (15%) hinder the further improvement of the efficiency of silicon solar cells. The silicon nanowire array can increase the trapping path length of the incident light ...
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IPC IPC(8): B81C1/00
Inventor 李美成黄睿白帆谷田生姜冰宋丹丹李英峰
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)