Magnetron sputtering apparatus and method

Abstract

A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.

Description

[0001] technology area [0002] The invention relates to a magnetron sputtering device and a magnetron sputtering method. Background technique [0003] Magnetron sputtering devices used in the manufacturing process of semiconductor devices, such as Figure 33 The configuration shown is such that a target 13 made of a film-forming material is arranged to face a substrate (substrate) 12 in a vacuum container 11 set to a low-pressure atmosphere, and a target 13 is provided on the upper surface side of the target 13. When the target 13 is a conductor such as metal, the magnet 14 forms a magnetic field near the lower surface of the target 13 in a state where a negative DC voltage is applied. In addition, in order to prevent particles from adhering to the inner wall of the vacuum container 11 , an anti-adhesion shield (not shown) is provided. [0004] The above-mentioned magnet 14, such as Figure 34 As shown, in general, for example, a circular magnet 16 having a polarity differe...

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Problems solved by technology

The sputtered threshold voltage of W is about 33eV, and it is clear that the recoil energy of Ar is greater than this value, which causes a large number of defects to be generated in the film.

In addition, the amount of Ar in the film also increases, which causes the increase in resistance together with defects.

However, in the conventional magnetron sputtering apparatus, since the distance between the target and the substrate is long and the plasma density near the substrate is low by causing discharge in a low-pressure environment, it is necessary to energize Ar ions with high energy.

Therefore, it is necessary to apply a high-potential high-frequency power to the substrate, but as a result, since a negative potential more than necessary is generated on the substrate, Ar ions with excess energy are drawn onto the substrate, and the Ar ions protrude into the substrate as described above. The W film obtained by film formation causes defects on the film

It is conceivable to increase the pressure in order to reduce the applied high-frequency power, but as described above, the film formation efficiency becomes lower

[0024] As mentioned above, in the conventional magnetron sputtering apparatus in which the distance between the target 13 and the substrate is 50 mm to 100 mm, in the case of forming a film of a high-melting point metal such as W, it is currently difficult to satisfy both high-speed film formation and formation. Conditions for membrane efficiency, target usage efficiency, low electrical resistance and good membrane quality

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