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Method for measuring dielectric properties of diamond anvil cells in situ

A technology of diamond anvil and dielectric properties, which is applied in the direction of measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., and can solve problems such as measurement errors and incomplete insulation of sample chambers

Inactive Publication Date: 2013-05-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the high-voltage dielectric study of CdS by He et al., the two-probe electrode configuration used is far from that of an ideal capacitor. In this case, the formula ε used to calculate the dielectric constant r =d / (2πRSf max ε 0 ) is no longer applicable, and the inner wall of the sample chamber cannot be completely insulated, which brings great errors to the measurement

Method used

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  • Method for measuring dielectric properties of diamond anvil cells in situ
  • Method for measuring dielectric properties of diamond anvil cells in situ
  • Method for measuring dielectric properties of diamond anvil cells in situ

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Example 1 Production of composite insulating gasket

[0027] Step 1: Choose T301 steel sheet as gasket material, and use diamond to pre-press the anvil to a thickness of about 40μm. There are diamond anvil surface indentation, diamond anvil chamfering indentation and diamond anvil side edge indentation on the steel sheet from the inside to the outside.

[0028]Step 2: Use a laser drilling machine to make holes at the center of the indentation on the anvil surface of the diamond anvil (the diameter of the diamond anvil surface used in the experiment is 400 μm, and the hole diameter of the hole is 300 μm), and the diameter of the hole is smaller than that of the diamond anvil. The indentation diameter of the anvil surface can be 3 / 4 of the indentation diameter of the anvil surface of the diamond anvil.

[0029] The third step: Mix diamond powder or cubic boron nitride powder or alumina powder with epoxy resin in a ratio of 4:1 by mass, grind evenly and fill in the holes ...

Embodiment 2

[0032] Example 2 Making electrodes on diamond anvil

[0033] The process of making electrodes on a diamond anvil can refer to the prior art: ZL200710055801.8, the name of the invention is "diamond anvil for in-situ measurement of electrical quantities and its manufacturing method". The only difference of the present invention is that the shape of the electrodes on the anvil surface of the diamond anvil is circular. The specific production steps are as follows.

[0034] Step 1: Soak the diamond anvil in a mixture of alcohol and acetone for 30 minutes to remove surface stains, and rinse with deionized water after taking it out.

[0035] The second step: on the surface of the two diamond anvils, a layer of metal molybdenum is respectively plated by magnetron sputtering as the electrode material.

[0036] Step 3: Take out the diamond anvil plated with metal molybdenum film, apply a layer of photoresist evenly on the surface of the two diamond anvils, and use the photoresist to c...

Embodiment 3

[0039] Example 3 Assembly of two diamond anvils with electrodes and composite insulating gaskets.

[0040] combine figure 2 The assembly in the measurement of in situ dielectric properties is illustrated. figure 2 Among them, 1 is a diamond anvil, 2 is a composite insulating gasket, 3 is a circular electrode, which is composed of a metal molybdenum film, 4 is an aluminum oxide film, 5 is a sample cavity, 6 is a ruby ​​pressure mark, and 7 is an electrode lead, which can be It is a thin copper wire, 8 is an insulating layer, the insulating layer 8 is pressed on the composite insulating gasket 2, and the position is on the side wall of the sample chamber 5 and the chamfer of the corresponding diamond anvil 1. In the figure, the diagonal line from the lower left to the upper right Marked, the material of the insulating layer 8 can be a mixture of diamond powder and epoxy resin, or a mixture of cubic boron nitride powder and epoxy resin, or a mixture of alumina powder and epoxy...

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Abstract

The invention discloses a method for measuring dielectric properties of diamond anvil cells in situ and belongs to the technical field of electromagnetic measurement under high voltage. The method comprises the following steps of firstly, assembling the diamond anvil cells, i.e. respectively forming round electrodes on the anvil surfaces of two diamond anvil cells, wherein an insulating layer is arranged on the inner side wall of a sample cavity of a composite insulating cushion; secondly, performing measurement, i.e. using a frequency response analysis meter to obtain relation patterns between an impedance real part and an impedance virtual part under different pressures; and finally, performing data processing, i.e. using Zview software and an electromagnetic metering formula related to dielectric properties to obtain the relative dielectric constant epsilon r, the dielectric constant real part epsilon', the dielectric constant virtual part epsilon'', the loss tan theta and the like. The shapes and the positions of the electrodes are fixed, and meanwhile, correction is performed because of the influence of fringe effect on a measuring result; and the prepared composite insulating cushion ensures complete insulation of the inner wall of a voltage cavity, so that the method for precisely measuring the dielectric properties of a material in situ under high voltage is realized.

Description

technical field [0001] The invention belongs to the technical field of electromagnetic measurement under high pressure, and particularly relates to a method for measuring the dielectric properties of substances on a diamond anvil. Background technique [0002] The Diamond Counter Anvil (DAC) is currently the only scientific experimental device capable of generating static pressures above one million atmospheres, and is irreplaceable in high-pressure scientific research. The technological innovation of in-situ physical quantity detection under high pressure based on DAC determines the main features of modern high-pressure scientific research. With the rapid development of science and technology, the physical quantities that can be measured under normal pressure have also been broken through successively under high pressure, making the scientific research of matter under high pressure more extensive and in-depth. Every breakthrough in in-situ measurement methods under high pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/26
Inventor 高春晓王庆林刘才龙韩永昊彭刚吴宝嘉李玉强张俊凯吴雷
Owner JILIN UNIV
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