Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology

A broadband low-noise, noise-cancelling technology, applied in the direction of improving amplifiers to reduce noise effects, etc., can solve problems such as poor gain and noise performance, and achieve the effects of high cost performance, easy integration, and reduced chip area.

Inactive Publication Date: 2013-05-08
TIANJIN UNIV
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  • Abstract
  • Description
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  • Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology
  • Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology
  • Complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology

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Embodiment

[0027] This embodiment adopts figure 2 The circuit structure shown, the circuit simulation is based on CHRT0.18μm RF technology, using Cadence SpectreRF tools. The power supply VDD voltage is 1.8V, and the working frequency range is 0.1-1.2GHz. image 3 The simulation results before and after the noise (NF) are given; Pic 4-1 and Figure 4-2 The graphs of the pre- and post-simulation results of the S parameters are given, where S11, S12, S21 and S22 represent the input reflection coefficient, reverse voltage gain, forward voltage gain and output reflection coefficient respectively; Figure 5 The simulation results of the input third-order intercept point IIP3 at a frequency of 600MHz are given. The noise is 1.3-1.55dB, the gain of the circuit is greater than 16dB, and the input third-order intercept point IIP3 of the 600MHz frequency circuit is -7dBm. These results show that the present invention has certain advantages in terms of input matching, noise, gain, bandwidth a...

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Abstract

The invention discloses a complementary metal-oxide-semiconductor transistor (CMOS) broadband low-noise amplifier adopting noise cancellation technology. The CMOS broadband low-noise amplifier structurally comprises a signal input stage and a noise cancellation stage, wherein the signal input stage is composed of an inductance Li, a resistance RF, an N-channel metal oxide semiconductor (NMOS) tube M1-a and a P-channel metal oxide semiconductor (PMOS) tube M1-b, and the PMOS tube M1-b and the NMOS tube M1-a form an automatic biasing phase inverter, negative feedback of the resistance RF is utilized by the signal input stage to achieve matching of input impedance, and the inductance Li provides resonance at the input end. The resonance is used for canceling capacitive parasitism of the input end, and the noise cancellation stage is composed of a resistance R1, a capacitance C1 and two NMOS transistors M2 and M3. The noise cancellation stage is used for mutually canceling with noise voltage of the signal input stage. The amplifier has the advantages in factors of input matching, noise, transmission gaining, bandwidth and linearity, and is simple in structure, small in chip area, convenient to integrate, low in cost and high in cost performance.

Description

technical field [0001] The invention relates to a low-noise amplifier, in particular to a CMOS broadband low-noise amplifier using noise cancellation technology. Background technique [0002] With the continuous development of wireless communication technology, wireless broadband technology has become the preferred technology for most users to upgrade. Wideband low-noise amplifiers are very critical modules in wireless broadband systems, especially in wireless receivers, where low-noise amplifiers are generally located at the front end of the receiver, such as figure 1 As shown, the weak signal fed from the antenna needs to be amplified by the low-noise amplifier after passing through the band-pass filter, and then processed in the subsequent stage. Its performance directly affects the overall performance of the receiver. It must achieve input impedance matching over a wide frequency band, provide flat gain, introduce as little noise as possible, and ensure sufficient linea...

Claims

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Application Information

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IPC IPC(8): H03F1/26
Inventor 秦国轩闫月星杨来春
Owner TIANJIN UNIV
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