Solar selective absorbing film series suitable for medium-high temperature heat usage and preparation method thereof
A solar energy and selective technology, which is applied in the field of heat absorbing film of solar collectors and photothermal conversion materials, can solve the problems of high emissivity of absorbing film patents, achieve the effects of reducing heat loss, prolonging service life, and increasing the temperature of empty burning
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0046] A solar selective absorption film system 1 suitable for medium and high temperature heat utilization and a preparation method thereof.
[0047] The structure of this absorption film system 1 is as attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0048] Cu foil substrate / Ag thin film (100nm) / Cu thin film (20nm) / TiAl x N y o z Thin film (88nm) / ZnSnSbO x Thin film (60nm) / SiO 2 Thin film (86nm).
[0049] The reflectance spectrum of the film is attached to figure 2 As shown, according to the national standard GB / T6424-2007 and GB / T4271-2007, the technical indicators of the film system are as follows:
[0050] The absorption rate reaches 96.4%, and the emission rate is 1.9%.
[0051] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorbing film system is as follows:
[0052] First, a layer of Ag thin film was plated on the Cu foil subst...
Embodiment 2
[0057] A solar selective absorption film system 2 suitable for medium and high temperature heat utilization and a preparation method thereof.
[0058] The structure of this absorbing film system 2 is as attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0059] Al foil substrate / Ag thin film (150nm) / Cu thin film (10nm) / TiAl x N y o z Thin film (40nm) / ZnSnSbO x Thin film (150nm) / SiO 2 Thin film (50nm).
[0060] The reflection spectrum of the film system is attached image 3 As shown, according to the national standard GB / T6424-2007 and GB / T4271-2007, the technical indicators of the film system are: the absorption rate reaches 96.2%, and the emissivity rate is 1.8%.
[0061] Taking the process parameters of the magnetron sputtering equipment used in this embodiment as an example, the preparation method of this absorbing film system is as follows:
[0062] First, a layer of Ag thin film was plated on the Cu foil substrate with an Ag t...
Embodiment 3
[0067] A solar selective absorption film system 3 suitable for medium and high temperature heat utilization and a preparation method thereof.
[0068] The structure of this absorption film system 3 is as attached figure 1 As shown, the thickness composition of each film layer is as follows:
[0069] Stainless steel foil substrate / Ag thin film (200nm) / Cu thin film (5nm) / TiAl x N y o z Thin film (150nm) / ZnSnSbO x Thin film (40nm) / SiO 2 Thin film (150nm).
[0070] The reflection spectrum of the film system is attached Figure 4 As shown, according to the national standard GB / T6424-2007 and GB / T4271-2007, the technical indicators of the film system are: the absorption rate reaches 97.2%, and the emissivity rate is 2.0%.
[0071] The preparation method of this coated glass is as follows:
[0072] First, a layer of Ag thin film was plated on the Cu foil substrate with the Ag target material, the thickness was 200nm, the sputtering power was 1kW, and the Ar gas flow rate was ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com