Monolithic integrated radio frequency high-gain low-noise amplifier

A low-noise amplifier and monolithic integration technology, which is applied to high-frequency amplifiers and improved amplifiers to reduce noise effects. It can solve the problems of low-gain and low-swing circuits and insufficient integration of external components, and achieve increased gain and excellent performance. , the effect of good noise figure

Inactive Publication Date: 2013-05-22
TIANJIN UNIV
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Problems solved by technology

[0004] Aiming at the above-mentioned prior art, the present invention provides a monolithic integrated radio frequency high-gain low-noise amplifier, the purpose of which

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  • Monolithic integrated radio frequency high-gain low-noise amplifier
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  • Monolithic integrated radio frequency high-gain low-noise amplifier

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Embodiment Construction

[0030] The present invention will be further described in detail below in combination with specific embodiments.

[0031] Such as image 3 As shown, a monolithic integrated radio frequency high-gain low-noise amplifier of the present invention includes an input matching circuit, a first-stage amplifying circuit, a second-stage amplifying circuit and an output matching circuit.

[0032] The input matching circuit is composed of an input inductor L2, a MOS transistor M2, a capacitor C1 connected in parallel with the gate source of the MOS transistor M2, and a source inductor L3 connected to the MOS transistor M2; the radio frequency signal RFIN at the input terminal is input to the MOS transistor through the inductor L2 The gate of the transistor M2 and the source of the MOS transistor M2 are grounded through the inductor L3. At the same time, the capacitor C1 is connected in parallel to both ends of the gate source of the MOS transistor M2, and the optimal noise and better powe...

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Abstract

The invention discloses a monolithic integrated radio frequency high-gain low-noise amplifier which comprises an input match circuit, a first level amplifying circuit, a second level amplifying circuit and an output match circuit. A typical cascode structure with source electrode inductance negative feedback is adopted by the first level amplifying circuit. The second level amplifying circuit is of a common source electrode structure with resistance feedback. Due to the fact that the Chart 0.18-micrometer radio frequency complementary metal oxide semiconductor (RFCMOS) technology is adopted by the second level amplifying circuit, the circuit design of complete integration of all active devices and passive devices on a monolithic is finished. The monolithic integrated radio frequency high-gain low-noise amplifier achieves optimal noise matching and input impedance matching at the same time, not only enables a circuit to have optimal noise performance, but also enables the circuit to achieve power transfer better. Besides, the monolithic integrated radio frequency high-gain low-noise amplifier is high in gain, good in stability and capable of enabling the circuit structure to be high in practical value. Through validating, input and output matching of the circuit is good, and the circuit has gain of more than 27dbs and noise of 2dbs.

Description

technical field [0001] The invention relates to a radio frequency low-noise amplifier, in particular to a single-chip integrated high-gain noise amplifier operating at 2.4GHz, which can be directly applied to the fields of electronic communication, bluetooth reception and the like. Background technique [0002] In recent years, with the rapid development of integrated circuit technology, our daily life is increasingly inseparable from wireless communication products, such as GSM wireless communication network working at 880-915MHz, Bluetooth communication products working at 2.4Ghz, etc. RF low noise amplifiers are a key part of the front end of the wireless receiver modules in these products. Its function is to amplify the weak signal received through the antenna so that the module behind the receiver can process it. Low-noise amplifiers are key components of modern radio frequency communication systems and have been a research hotspot for a long time. The low noise ampli...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F3/189
Inventor 秦国轩杨来春闫月星
Owner TIANJIN UNIV
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