The invention provides an ultra
wide band bridge based on a thick film
manufacturing technology. The ultra
wide band bridge comprises a thick film circuit substrate, a
coaxial cable, a
magnetic core and a
capacitor. The ultra
wide band bridge is externally provided with three mutually connected ports P1, P2 and P3, wherein the port P1 and the port P3 are two
radio frequency ports connected to a
resistor power distribution circuit and the port P2 is connected to the unbalanced end of a
Balun. When signals are transmitted in a non-inverting mode, the port P1 serves as an input port, and after
resistor power distribution, partial power is coupled to the port P3 to be output and partial power is directly output through the port P2. When the signals are transmitted in an inverting mode, the port P2 serves as the input port, the signals are converted by the
Balun from being unbalanced to being balanced, two routes of signals which are equal in amplitude and opposite in phase are obtained at the balanced end, the two routes of signals are offset at the port P3 through power
distribution circuits respectively,
signal isolation is achieved for the port P3, and partial power is directly output through the port P1. By the adoption of the ultra wide band bridge based on the thick film
manufacturing technology, the applicable frequency of the directional bridge based on the
Balun and the
resistor power distribution circuit can be improved to be in a
millimeter wave band, a larger working bandwidth can be realized, and the ultra wide band bridge is simple in structure and convenient to integrate.