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Nonpolar p-NiO or n-ZnO heterostructure and preparation method thereof

A heterogeneous structure, non-polar technology, applied in the direction of climate sustainability, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of pn junction devices that have not been reported, and achieve low cost, simple preparation process, Heterostructure Simple Effects

Inactive Publication Date: 2015-07-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report of pn junction devices prepared by non-polar ZnO and (100)-oriented NiO

Method used

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  • Nonpolar p-NiO or n-ZnO heterostructure and preparation method thereof
  • Nonpolar p-NiO or n-ZnO heterostructure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] 1) Substrate cleaning: The m-plane sapphire substrate was ultrasonically cleaned with acetone, alcohol and deionized water for 10 min, and finally dried with nitrogen.

[0023] 2) A (100)-oriented n-type ZnO thin film was grown on an m-plane sapphire substrate by pulsed laser deposition: the target material was a pure ZnO ceramic target, and the background vacuum was 1×10 -3 Pa, the substrate temperature is 550 °C, the growth pressure is 0.2 Pa, the laser power is 300 W, and the growth time is 30 min.

[0024] 3) A (100) oriented p-type NiO film is deposited on a (100) oriented n-type ZnO film by pulsed laser deposition: the target material is a NiO ceramic target with a Li-doped molar concentration of 10%, and the background vacuum is 1 ×10 -3 Pa, the substrate temperature is 400 ℃, the growth pressure is 2 Pa, the laser power is 300 W, and the growth time is 60 min, the nonpolar p-NiO / n-ZnO heterojunction is prepared, namely figure 1 The structure shown, from the ...

Embodiment 2

[0026] 1) Substrate cleaning: The m-plane sapphire substrate was ultrasonically cleaned with acetone, alcohol and deionized water for 10 min, and finally dried with nitrogen.

[0027] 2) A (100)-oriented n-type ZnO thin film was grown on an m-plane sapphire substrate by molecular beam epitaxy: pure metal Zn (purity 99.9998%) was used as the Zn source, and the Zn source temperature was 300 °C. o 2 (99.9999% purity) was used as the O source, the RF power was 300 W, and the growth pressure was adjusted to 3×10 -5 Torr, the oxygen flow rate is 3 sccm, the substrate temperature is raised to 700 °C, and a (100)-oriented ZnO film is grown for 3 hours.

[0028] 3) A (100) oriented p-type NiO film is deposited on a (100) oriented n-type ZnO film by pulsed laser deposition: the target material is a NiO ceramic target with a Li-doped molar concentration of 5%, and the background vacuum is 1 ×10 -3 Pa, the substrate temperature is 400 ℃, the growth pressure is 2 Pa, the laser power i...

Embodiment 3

[0030] 1) Substrate cleaning: The m-plane sapphire substrate was ultrasonically cleaned with acetone, alcohol and deionized water for 10 min, and finally dried with nitrogen.

[0031] 2) The (100)-oriented n-type ZnO film was grown on the m-plane sapphire substrate by molecular beam epitaxy: using pure metal Zn (purity 99.9998%) as the Zn source, the Zn source temperature was 280 ℃, and the pure ZnO film activated by radio frequency o 2 (99.9999% purity) was used as the O source, the RF power was 300 W, and the growth pressure was adjusted to 2×10 -5 Torr, the oxygen flow rate is 2 sccm, the substrate temperature is raised to 600 °C, and the (100)-oriented ZnO film is grown for 3 hours.

[0032] 3) Deposit (100) oriented p-type NiO thin film on (100) oriented n-type ZnO thin film by pulse laser deposition method: the target material is pure NiO (99.99% pure) ceramic target, and the background vacuum is 1×10 -3 Pa, the substrate temperature is 500 ℃, the growth pressure is ...

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Abstract

The invention discloses a nonpolar p-NiO or n-ZnO heterostructure. The nonpolar p-NiO or n-ZnO heterostructure comprises a substrate and nonpolar oriented pn junctions which grow on the substrate, wherein the substrate is m-side sapphire, the pn junctions are heterogeneous pn junctions which successively grow on the substrate from bottom to top and are formed by a (100) oriented n-type ZnO film and a (100) oriented p-type NiO film. The preparation method of the nonpolar p-NiO or n-ZnO heterostructure comprises the following steps: at first adopting a molecular beam epitaxy method or a pulsed laser deposition method to prepare (100) oriented n-type ZnO film on the substrate of the m-side sapphire; and then adopting the pulsed laser deposition method to prepare the (1000) oriented p-NiO film on the ZnO film. The nonpolar p-NiO or n-ZnO heterostructure does not exist in a built-in electric field, and the luminous efficiency of a ZnO base photoelectric device is benefited to improve. The nonpolar p-NiO or n-ZnO heterostructure can be widely used in the fields such as an ultraviolet detector, light emitting diodes and a gas sensor.

Description

technical field [0001] The invention relates to a nonpolar p-NiO / n-ZnO heterostructure and a preparation method thereof, belonging to the field of optoelectronic functional devices. Background technique [0002] NiO, as a typical p-type wide bandgap semiconductor thin film material (bandgap 3.6-4.0 eV), has shown broad application prospects in the fields of p-type transparent conductive films, gas sensors, and ultraviolet detectors. With the development of optoelectronic technology, semiconductor optoelectronic thin film materials have been highly valued in recent years. As a representative intrinsic p-type semiconductor material, NiO thin film has attracted the attention of researchers and has become a hot spot in the field of semiconductor research. [0003] Under natural conditions, NiO is a single, stable cubic sodium chloride structure, and NiO prepared by conventional methods usually exhibits a (111) orientation. In recent years, many studies have shown that (100) ori...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/18
CPCY02P70/50
Inventor 张宏海吕斌潘新花叶志镇吕建国黄靖云
Owner ZHEJIANG UNIV
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