Preparation method of porous ZnO and ZnO/Ag nanometer free-standing film

A self-supporting, nanotechnology, applied in the field of nanomaterial preparation and performance research, can solve the problems of ZnO self-supporting film less, complex preparation methods, etc., to achieve good application prospects, simple equipment, simple container effect

Inactive Publication Date: 2013-07-17
TONGHUA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It also includes ZnO nano-films constructed by various building units, but these films are basically constructed on substrates of other materials, and the interface between the substrate and the material will affect the performance of the ma

Method used

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  • Preparation method of porous ZnO and ZnO/Ag nanometer free-standing film
  • Preparation method of porous ZnO and ZnO/Ag nanometer free-standing film
  • Preparation method of porous ZnO and ZnO/Ag nanometer free-standing film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Measure 100 mL of deionized water into a conical flask with a volume greater than 100 mL, add 2.9 g of zinc acetate dihydrate, and dissolve it completely under magnetic stirring.

[0037] (2) Add 1.66 g of hexamethylenetetramine to the above solution and dissolve it completely under stirring.

[0038] (3) After sealing the container, place it in an oven at 60°C for 12 hours.

[0039] (4) Spread the filter paper on the bottom of the suction filter funnel and connect it to the vacuum pump. After preliminarily wetting the filter paper with deionized water, start the vacuum pump and slowly pour the flocculent suspension obtained in step (3) into the funnel for suction filtration Until no more water droplets are filtered out.

[0040] (5) The prepared basic zinc carbonate film together with the filter paper is placed under ambient conditions to dry naturally, and the filter paper is peeled off to obtain a basic zinc carbonate self-supporting film.

[0041] (6) Put the ...

Embodiment 2

[0045] (1) Measure 100 mL of deionized water into a conical flask with a volume greater than 100 mL, add 2.9 g of zinc acetate dihydrate, and dissolve it completely under magnetic stirring.

[0046] (2) Add 2 mL of 0.1 mol·L -1 of silver nitrate solution.

[0047] (3) Add 1.66 g of hexamethylenetetramine to the above solution and dissolve it completely under stirring;

[0048] (4) After sealing the container, place it in an oven and react at 60°C for 12 hours.

[0049] (5) Spread the filter paper on the bottom of the suction filter funnel and connect it to the vacuum pump, and preliminarily wet the filter paper with deionized water, then start the vacuum pump and slowly pour the flocculent suspension obtained in step (3) into the funnel for suction filtration Until no more water droplets are filtered out.

[0050] (6) The prepared basic zinc carbonate nanobelts and silver nanoparticle film together with the filter paper were placed in ambient conditions to dry naturally, an...

Embodiment 3

[0055] (1) Measure 100 mL of deionized water into a conical flask with a volume greater than 100 mL, add 5.48 g of zinc acetate dihydrate, and dissolve it completely under magnetic stirring.

[0056] (2) Add 3.41 g of hexamethylenetetramine to the above solution and dissolve it completely under stirring.

[0057] (3) After sealing the container, place it in an oven at 50°C for 12 hours.

[0058] (4) Spread the filter paper on the bottom of the suction filter funnel and connect it to the vacuum pump, and preliminarily wet the filter paper with deionized water, then start the vacuum pump and slowly pour the flocculent suspension obtained in step (3) into the funnel for suction filtration Until no more water droplets are filtered out.

[0059] (5) Put the obtained basic zinc carbonate film together with the filter paper to dry naturally at 60°C, and peel off the filter paper to obtain the basic zinc carbonate self-supporting film.

[0060] (6) Put the dried basic zinc carbonate...

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Abstract

The invention belongs to the technical field of nanometer material preparation and performance research and in particular relates to a preparation method of a porous ZnO and ZnO/Ag nanometer free-standing film and a method of using the porous ZnO and ZnO/Ag nanometer free-standing film for organic dye photo-catalytic degradation treatment. The preparation method comprises the following steps of: preparing a basic zinc carbonate nanometer precursor in an aqueous solution containing zinc acetate and hexamine; removing a reaction mother solution by carrying out vacuum filtration on the prepared precursor and forming a uniform film layer on the surface of filter paper; and drying for peeling off the filter paper and the precursor to obtain the basic zinc carbonate nanometer precursor free-standing film; roasting the free-standing film to obtain the porous ZnO nanometer free-standing film; adding a proper amount of silver nitrate in the precursor preparation process, generating Ag nanometer particles in situ on the surface of the nanoribbon and finally forming the ZnO/Ag nanometer composite free-standing film. The preparation method of the porous ZnO and ZnO/Ag nanometer free-standing film is low in consumption, environmentally-friendly and easy for realization of expansion, and has prospect in large-scale industrial production.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation and performance research, and in particular relates to a method for preparing ZnO and ZnO / Ag nano self-supporting films and for photocatalytic degradation treatment of organic dyes. Background technique [0002] Semiconductor materials and technology are the driving force and engine that promote the advancement of the information age, and are the core and forerunner of modern high technology. The first generation of semiconductor materials, represented by silicon, has realized the leap-forward development of the microelectronics industry and the entire IT industry. However, due to the narrow band gap, low electron mobility and breakdown electric field of silicon materials, its application in the field of optoelectronics and high-frequency and high-power devices is limited. Therefore, gallium arsenide (GaAs) and indium phosphide (InP ) as the representative of the second generatio...

Claims

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Application Information

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IPC IPC(8): C01G9/02B82Y30/00B01J23/06B01J35/10B01J23/66
Inventor 董丽红战佩英
Owner TONGHUA NORMAL UNIV
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