Metal oxide semiconductor p-n junction diode and manufacturing method thereof

Abstract

The invention discloses a metal oxide semiconductor positive-negative (P-N) junction diode and a manufacture method thereof. The diode comprises a semiconductor substrate, a mask layer, an annular edge layer, a gate oxidation layer, a polycrystalline silicon structure, a central conducting-connecting layer, a silicon nitride layer, metal diffusion layers, a channel region and a metal sputtering coating layer. The manufacture method comprises the following steps of forming the mask layer on the semiconductor substrate; forming the gate oxidation layer on the semiconductor substrate and forming the polycrystalline silicon structure on the gate oxidation layer; forming the annular edge layer, the central conducting-connecting layer and the channel region in the semiconductor substrate through an ion implantation manufacture process; forming the silicon nitride layer protruding out of the polycrystalline silicon structure on the partial surface of the central conducting-connecting layer; forming the metal diffusion layers inside the annular edge layer and the central conducting-connecting layer; and forming the metal sputtering coating layer and enabling the metal sputtering coating layer to expose out of the partial surface of the mask layer.

Description

Technical field [0001] The present invention relates to a metal oxide semiconductor P-N junction diode and a manufacturing method thereof; in particular, it relates to a manufacturing method to provide a shorter reverse recovery time (t RR ) And other characteristics of metal oxide semiconductor P-N junction diode. Background technique [0002] Schottky Diode (Schottky Diode) is a unipolar element that uses electrons as carriers. Because there is no factor of minority carrier recombination, its characteristics are fast speed, and a lower forward bias voltage (ForwardBiasVoltage; V f ), there can be a larger forward current and a shorter reverse recovery time (ReverseRecoveryTime; t RR ), but if a continuously increasing reverse bias is added, there will be a larger leakage current (related to the Schottky Barrier caused by the metal work function and semiconductor doping concentration). The PN diode is a dual-carrier element, which conducts a large amount of current, but the forwa...

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Problems solved by technology

[0008] Compared with the Schottky diode, the gated diode completed by the above manufacturing process has a lower reverse bias leakage current, a similar forward bias voltage and a higher interface withstand temperature, and the test results have a higher Good reliability, but its reverse recovery time at room temperature is higher than that of Schottky diodes, which degrades the performance of its components

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