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Novel production method of c-orientation sapphire single crystal

A production method and technology for sapphire, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of slow growth rate and small adjustable range, and achieve the effect of improving the utilization rate of materials

Inactive Publication Date: 2013-07-24
苏州海铂晶体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the growth rate is slow, and the adjustable range of the angle between the solid-liquid interface and the c-plane is small

Method used

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  • Novel production method of c-orientation sapphire single crystal
  • Novel production method of c-orientation sapphire single crystal
  • Novel production method of c-orientation sapphire single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The thermal field shown in Figure 1 is used to grow c-oriented sapphire single crystal.

[0046] The three symmetry axes of the crucible, heater, and side reflector do not coincide to make the solid-liquid interface tilt, so that the solid-liquid interface is controlled as a plane at a certain angle with the c-plane. The process is as follows:

[0047] (1) Place the seed crystal: place the c-oriented seed crystal in the seed crystal groove of the crucible;

[0048] (2) Loading: Put 20-100kg of high-purity alumina raw material into the crucible, close the furnace cover, and start the cooling water circulation system;

[0049] (3) Vacuuming: Start the vacuum system and pump the furnace chamber pressure to 4Pa;

[0050] (4) Start the helium: start the helium cooling system, adjust the helium flow rate to 40-100slm, and prevent the seed crystal from completely melting during the materialization process;

[0051] (5) Heating material: Start the heating system to heat up un...

Embodiment 2

[0056] Attached figure 2 The thermal field shown carries out the growth of a c-oriented sapphire single crystal.

[0057] The three symmetry axes of the crucible, heater, and side reflective screen do not coincide to make the solid-liquid interface tilt, and a frustum-shaped reflective screen is placed on the top of the crucible to reduce the radial temperature gradient of the crystal and the melt, so that the solid-liquid interface is One plane, the heater is in the shape of a truncated cone with a small opening at the upper end and a larger opening at the lower end to increase the axial temperature gradient, so that the solid-liquid interface is controlled as a plane at a certain angle with the c-plane. The process is as follows:

[0058] (1) Place the seed crystal: place the c-oriented seed crystal in the seed crystal groove of the crucible;

[0059] (2) Loading: Put 20-100kg of high-purity alumina raw material into the crucible, close the furnace cover, and start the coo...

Embodiment 3

[0067] Attached image 3 The thermal field shown carries out the growth of a c-oriented sapphire single crystal.

[0068] The three symmetry axes of the crucible, heater, and side reflective screen do not coincide to make the solid-liquid interface tilt, and a frustum-shaped reflective screen is placed on the top of the crucible to reduce the radial temperature gradient of the crystal and the melt, so that the solid-liquid interface is One plane, make the side reflective screen in the shape of a truncated cone with a small opening at the upper end and a larger opening at the lower end to increase the axial temperature gradient, thereby controlling the solid-liquid interface to be a plane at a certain angle with the c-plane. The process is as follows:

[0069] (1) Place the seed crystal: place the c-oriented seed crystal in the seed crystal groove of the crucible;

[0070] (2) Loading: Put 20-100kg of high-purity alumina raw material into the crucible, close the furnace cover,...

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Abstract

The invention discloses a novel production method of a c-orientation sapphire single crystal. The novel production method comprises the following steps of: placing c-orientation sapphire seed crystals in the seed crystal groove of a crucible; filling high-purity aluminum oxide raw materials; vacuumizing and subsequently heating to completely melt the aluminum oxide raw materials and partially melt the seed crystals; slowly cooling at a speed of 0.01-10DEG C / h; controlling a solid-liquid interface to a plane having a certain angle with a c-surface; annealing at a cooling speed of 2-50 DEG C / h after the growth of the crystals is ended; and cooling to the room temperature and subsequently taking the crystal out. According to the invention, by adopting a method for deviating a crucible symmetry axis, a heater symmetry axis and a lateral reflecting screen symmetry axis, the solid-liquid interface in the growth process of the sapphire single crystal is a plane having a certain angle with the c-surface, and the material utilization rate of grown c-orientation crystal ingots can be greatly improved in comparison with the material utilization rate of a-orientation crystal ingots; and compared with the traditional growth method of the c-orientation crystal ingots, the crystal quality of the crystal ingots can be improved and the distortions of crystal boundaries and crystal lattices normally occurring during the growth of the c-orientation crystal ingots can be reduced.

Description

technical field [0001] The invention relates to the technical field of sapphire single crystal growth, in particular to a novel production method of c-oriented sapphire single crystal. Background technique [0002] Sapphire is an aluminum oxide (α-Al 2 o 3 ) single crystal, also known as corundum, the crystal has excellent optical properties, mechanical properties and chemical stability, high strength, high hardness, erosion resistance, and can work under harsh conditions close to 2000 ℃ high temperature, so it is widely used Window materials for infrared military devices, satellite space technology, and high-intensity lasers. Its unique lattice structure, excellent mechanical properties, and good thermal properties make sapphire crystal a practical semiconductor GaN / Al 2 o 3 Light-emitting diodes (LEDs), large-scale integrated circuits SOI and SOS, and superconducting nanostructure thin films are the most ideal substrate materials. In recent years, with the development...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20
Inventor 刘海滨
Owner 苏州海铂晶体有限公司
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