Transfer method of graphite film

A transfer method and graphene technology, applied in the field of material processing, can solve problems such as damage, high cost, and multiple pollutants in the graphene layer, and achieve the effects of reducing production costs, improving quality, and reducing pollution

Inactive Publication Date: 2013-07-31
PEKING UNIV
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method is convenient for large-area transfer of graphene to different substrates, it is easy to bring multiple pollutants and damage to the graphene layer.
In addition, the substrate material cannot be reused
High cost, not convenient for mass prod

Method used

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Embodiment Construction

[0028] The following examples illustrate the present invention, but these examples should not be construed as limiting the present invention.

[0029] Take graphene prepared by transferring nickel thin film with hydrochloric acid solution as an example:

[0030] 1. Pretreatment of nickel thin film

[0031] Metal nickel film (50nm-1mm) is used as a catalyst for CVD growth of graphene, and the surface of the nickel film is treated with acetone, ethanol and dilute hydrochloric acid to remove metal oxides, oil and other impurities.

[0032] 2. Prepare a single-layer, double-layer or more than three-layer graphene layer (thickness can reach less than micron) on the nickel film.

[0033] A graphene layer was prepared on a nickel film by chemical vapor deposition. The carbon source used was methane (CH 4 ), the other auxiliary gas in the reaction is hydrogen H 2 And argon Ar, in which hydrogen plays a reducing role and argon plays a protective role.

[0034] (1) Put the treated ...

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Abstract

The invention discloses a transfer method of graphite film, which belongs to the field of material processing. The method aims at graphite prepared on nickel and other metal films by chemical vapor deposition method (CVD), and employs hydrogen bubble generated by reaction of a dilute acid solution and a metal substrate to separate the graphite layer and the metal substrate. PMMA and other polymers are not needed to cover the upper layer of the graphite for transferring carrier according to the invention, so no pollutants are introduced, and damage of graphite surface is greatly reduced; the peeling process is carried out by a direct chemical reaction between the acidic solution and the metal, thereby realizing separation of graphite on the upper and lower surface of the metal film and the metal film simultaneously with high efficiency and without external power source and electrochemical reaction. The invention has a simple operation technology and does not relate to harmful chemical substances. The metal substrate can be used for multitime with repetition, and the cost is greatly reduced. The invention has a large application value in the industrial field for large scale preparation of graphite.

Description

technical field [0001] The invention belongs to the field of material processing, and in particular relates to a transfer method of a multilayer graphene film. Background technique [0002] In recent years, graphene, as an emerging material, has attracted extensive attention in the fields of scientific research and engineering. Graphene is a single-layer sheet nanomaterial composed of carbon atoms, with a theoretical thickness of only 0.34nm. its sp 2 The hybridized C atoms all form saturated bonds, so graphene has high chemical stability and mechanical strength, its Young's modulus can reach 1.0Tpa, and its breaking strength can reach 40N / m. In addition, graphene has good thermal and electrical conductivity, and its resistivity at room temperature is about ∼10 -8 Ω·m, can carry current density up to 10 8 A / cm 2 . Therefore, the material has great application prospects in the field of microelectronics. Graphene, as an allotrope of C element, can usually be synthesized...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/186
Inventor 李晨周梦杰胡保东赵华波魏子钧任黎明傅云义黄如张兴
Owner PEKING UNIV
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