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BMN (bismuth magnesium niobate)-based microwave dielectric ceramic material and preparation method thereof

A microwave dielectric ceramic and dielectric technology is applied in the field of bismuth magnesium niobate-based microwave dielectric ceramic materials and preparation, and can solve the problems of low tuning rate of BZN ceramic materials, high requirements for tuning electric field, low dielectric loss and the like, Achieve easy mass production, high repeatability, and low dielectric loss

Inactive Publication Date: 2013-08-07
JIANGSU UNIV
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Composed of Bi 1.5 ZnNb 1.5 o 7 The bismuth-based BZN material has a pyrochlore structure and a moderate dielectric constant; however, the tuning rate of the BZN ceramic material is low. To achieve a certain tuning rate, the tuning electric field is very demanding. Compared with the BZN ceramic material, another bismuth-based ceramic material has Cubic pyrochlore structure, Bi in the ternary system 2 o 3 —MgO—Nb 2 o 5 The dielectric ceramic system based on BMN (referred to as BMN-based ceramics) has begun to receive attention in the field of embedded capacitor applications because of the high dielectric constant and low dielectric loss of this system; studies have shown that the compound Bi 2 Mg 2 / 3 Nb 4 / 3 o 7 The dielectric constant is very high, up to 210

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment l

[0021] 1) Prepare bismuth magnesium niobate-based microwave dielectric ceramic targets by traditional solid-phase synthesis method: as follows:

[0022] Proportional components for batching, Bi 2 o 3 : 58.7292%, MgO: 6.889%, Nb 2 o 5 : 32.936%, Li 2 CO 3 : 0.1578%, SnO 2 : 1.288%.

[0023] 2) Use agate balls, stainless steel tanks, absolute ethanol as the ball milling medium, agate balls: ingredient powder: anhydrous ethyl alcohol

[0024]The mass ratio of alcohol is 2:1:1, and it is wet-milled in a planetary high-energy ball mill for 10 h at a speed of 150 rpm; the ball-milled slurry is kept at 70 °C for 24 h to form a dry powder; a 2% PVA aqueous solution is used as a viscous Binder, powder and PVA solution mass ratio is 9:1, then pass through 150 mesh standard sampling sieve, press with 20MPa pressure for 5min to make the powder into a billet; put the billet into a silicon-molybdenum rod high-temperature electric furnace, Raise from room temperature to 950 °C at a r...

Embodiment 2

[0033] In this example, according to the following mole percentage components, batching, Bi 2 o 3 : 58.2855%, MgO:

[0034] 6.837%, Nb 2 o 5 : 27.0519%, Li 2 CO 3 : 0.1566%, SnO 2 : 7.669%, using the same process steps as in Example 1 to make a bismuth magnesium niobate-based ceramic material.

[0035] The performance test of the bismuth magnesium niobate-based microwave dielectric ceramic film material produced in this embodiment shows that the dielectric constant is 157.4445, the dielectric loss is 0.00049, and the dielectric temperature coefficient is -435ppm / °C.

Embodiment 3

[0037] In this example, according to the following mole percentage components, batching, Bi 2 o 3 : 58.1108%, MgO: 6.816%,

[0038] Nb 2 o 5 : 24.723%, Li 2 CO 3 : 0.1562%, SnO 2 : 10.194%, using the same process steps as in Example 1 to make bismuth magnesium niobate-based ceramic materials.

[0039] The performance test of the bismuth magnesium niobate-based microwave dielectric ceramic material produced in this embodiment shows that the dielectric constant is 143.6293, the dielectric loss is 0.00040, and the dielectric temperature coefficient is -432ppm / °C.

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Abstract

The invention relates to the technical field of manufacturing of microwave dielectric ceramic materials, and particularly relates to a BMN (bismuth magnesium niobate)-based microwave dielectric ceramic material and a preparation method thereof. By regulating the reasonable ratio of dielectric functional additive, the material provided by the invention comprises the following components in percentage by mol: 58-59% of Bi2O3, 6.8-6.9% of MgO, 24-33% of Nb2O5, 0.15-0.2% of Li2CO3 and 1.2-10.2% of SnO2, wherein Bi2O3, MgO and Nb2O5 are main materials; Li2CO3 is dielectric functional additive; and SnO2 is dielectric functional additive. For the BMN-based ceramic material prepared through the traditional solid-phase synthesis method, the dielectric constant is 143-175, the dielectric loss is 0.00038-0.00049, and the dielectric temperature coefficient is (-536)-(-432)ppm / DEG C. The BMN-based microwave dielectric ceramic material provided by the invention can be used for a dielectric voltage-controlled microwave device in an integrated circuit.

Description

technical field [0001] The invention relates to the technical field of microwave dielectric ceramic material manufacturing, in particular to a bismuth magnesium niobate-based microwave dielectric ceramic material and a preparation method. Background technique [0002] In order to adapt to the rapid development of integrated circuits, scientists have done a lot of research work; in recent years, Bi cubic pyrochlore structure phase has been widely studied, ceramics with this phase structure have very high dielectric constant and dielectric tuning rate , It has low dielectric loss in a considerable test frequency range at room temperature, and the sintering temperature is relatively low. These properties make Bi-based cubic pyrochlore structure ceramics have good application prospects in multilayer capacitors and integrated devices. [0003] As early as the 1960s, Ba x Sr 1?x TiO 3 The microwave dielectric tuning properties of (BST) ferroelectric materials have aroused peopl...

Claims

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Application Information

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IPC IPC(8): C04B35/495C04B35/622
Inventor 花银群崔晓薛青陈瑞芳
Owner JIANGSU UNIV
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