C/SiC coating with pore structure and preparation method thereof

A technology of pore structure and coating, applied in the field of C/SiC coating containing pore structure and its preparation

Inactive Publication Date: 2013-09-11
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims at the problems of thermal mismatch and poor uniformity of CVD C / SiC coating, by designing a "slit-type" deposition chamber to control the air passage Size and path, so that the reaction gas can be quickly advected through the surface of the substrate, while adjusting the deposition process parameters (gas pressure, gas ratio and deposition temperature, etc.), the C / SiC coating can be rapidly deposited under negative pressure to obtain a typical C / SiC Coating Material Containing Pore Structure

Method used

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  • C/SiC coating with pore structure and preparation method thereof
  • C/SiC coating with pore structure and preparation method thereof
  • C/SiC coating with pore structure and preparation method thereof

Examples

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Embodiment 1

[0032] Example 1: see figure 1 , figure 2 and Figure 10 . The temperature in the constant temperature zone of the deposition chamber in the thermal furnace is 1150°C, the pressure in the furnace is 1kpa, MTS and H 2 The purity of the gas is ≥99%; the flow rate of MTS is determined by the carrier gas H 2 flow control, H 2 The flow rate is 0.3L / min; while diluting gas H 2 The flow rate is 0.6L / min, and the slit width of the "slit-type" deposition chamber is designed to be 2mm. "Slit" deposition chamber see figure 1 and Figure 10 , C / SiC coating phase composition see figure 2 , C / SiC coating surface morphology of C / C composite materials and graphite materials, see respectively image 3 and 4 .

Embodiment 2

[0033] Example 2: see figure 1 , figure 2 and Figure 10 . The temperature in the constant temperature zone of the deposition chamber in the thermal furnace is 1300°C, the pressure in the furnace is 5kpa, MTS and H 2The purity of the gas is ≥99%; the flow rate of MTS is determined by the carrier gas H 2 flow control, H 2 The flow rate is 0.3L / min; while diluting gas H 2 The flow rate is 0.6L / min, and the slit width of the "slit-type" deposition chamber is designed to be 5mm. "Slit" deposition chamber see figure 1 and Figure 10 , C / SiC coating phase composition see figure 2 , C / SiC coating surface morphology of C / C composite materials and graphite materials, see respectively image 3 and 4 .

Embodiment 3

[0034] Embodiment 3: see figure 1 , figure 2 and Figure 10 . The temperature in the constant temperature zone of the deposition chamber in the thermal furnace is 1200°C, the pressure in the furnace is 10kpa, MTS and H 2 The purity of the gas is ≥99%; the flow rate of MTS is determined by the carrier gas H 2 flow control, H 2 The flow rate is 0.4L / min; while diluting gas H 2 The flow rate is 0.9L / min, and the slit width of the "slit-type" deposition chamber is designed to be 8mm. "Slit" deposition chamber see figure 1 and Figure 10 , C / SiC coating phase composition see figure 2 , C / SiC coating surface morphology of C / C composite materials and graphite materials, see respectively image 3 and 4 .

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Abstract

The invention discloses a C / SiC coating with a pore structure and a preparation method of the same. The prepared C / SiC coating material is closely combined with the matrix, and is divided into a typical three-region structure, wherein the three regions include an interface combination region, a pore transition region and an outer layer compact region, and many pores with the diameter of 3-20 micrometers are distributed in the area between the compact outer layer and the interface layer of the coating. The preparation technology provided by the invention is used for preparing the C / SiC coating with a pore structure, of which the diameter is 3-20 micrometers, in a self-designed slot type deposition chamber, by controlling the slot size to be 2-8mm, using MTS as an SiC source gas, using H2 as MTS carrier gas and using H2 and Ar as conditioning gases. A large flow negative pressure rapid deposition technology is used, the reactant gases rapidly pass through the slot to realize deposition. For the C / SiC coating with the pore structure prepared by the invention, the bonding strength of the coating and the matrix is improved, the coating fissure caused by heat stress is remitted to a great extent, and the usability of the coating is improved greatly. Meanwhile, the problems of long cycle and limit on size in gas phase coating preparation of the normal technology are solved.

Description

Technical field: [0001] The invention relates to a C / SiC coating containing a pore structure and a preparation method thereof. technical background: [0002] SiC has excellent oxidation resistance, high-temperature mechanical properties and thermal conductivity, and is widely used in nuclear energy, semiconductors, especially high-temperature materials. SiC coating has a similar thermal expansion coefficient to C / C composite materials and graphite materials, and has good physical and chemical compatibility, and is oxidized at high temperature to form SiO with low oxygen diffusion rate. 2 Glass film, with excellent oxidation protection, is one of the important choices for the preparation of single-layer anti-oxidation protective coatings and composite anti-oxidation coatings. [0003] At present, the main technologies for preparing SiC coatings include embedding method, slurry sintering method, chemical vapor deposition method, chemical vapor phase reaction method and plas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/32C23C16/455C23C16/52
Inventor 张明瑜黄东黄启忠苏哲安谢志勇陈建勋
Owner CENT SOUTH UNIV
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