Field electron-excited uv light source structure and preparation method thereof
An ultraviolet light source and electronic excitation technology, which is applied in the direction of circuits, fluorescent screen lamps, electrical components, etc., can solve the problems of small environmental pollution, large environmental pollution, and low luminous efficiency, and achieve low environmental pollution, high luminous efficiency, and simple preparation process Effect
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Embodiment 1
[0045] Such as image 3 As shown, the cathode emitter and the excited light body are both planar structures, and they are placed in parallel. The space between them is a high vacuum environment, and the distance is 100 ~ 1000 μm; in the working state, between the cathode emitter and the excited light body A high voltage of 1500V or above is applied (the excited light body has a high potential).
Embodiment 2
[0047] Such as Figure 4 As shown, the excited light body is a bell jar structure, and from the outside to the inside are the transparent substrate 3, the conductive layer 4, the wide band gap semiconductor nanocrystalline layer 5 and the metal reflective layer 6; the cathode emitter has a columnar structure and is located in the receiving The geometric center of the excitation light body; the field emission array 1 uniformly covers the surface of the cathode emitter cylinder; the bell jar is in a high vacuum environment, and the distance between the cathode emitter and the excited light body is 100-1000 μm; the cathode emission is in working state A high voltage of 1500V or above is applied between the body and the excited light body (the excited light body has a high potential).
[0048] The preparation method of the above-mentioned ultraviolet light source structure is specifically as follows:
Embodiment 3
[0050] The preparation of the cathode emitter includes:
[0051] 1) Use a homogenizer to spin coat a layer of photoresist on the surface of the semiconductor substrate 2 and dry it. The thickness of the photoresist after drying is about 1 to 2 μm; the speed of the homogenizer is 3600 rpm. Spin for 10s, spin coating for 30 seconds;
[0052] 2) The corresponding mask is selected according to the preset period of the field emission array, and the photoresist is exposed and developed by photolithography to form the photoresist array structure. Among them, an ultraviolet lithography machine is used for photolithography, the light source is a 350W DC high-pressure mercury lamp, the exposure wavelength is 365nm, and the exposure time is 10s; the selected developer is 0.5% NaOH solution;
[0053] 3) The surface of the photoresist prepared in step 2) is plated with an iron catalyst layer by a thermal evaporation method; after the evaporation is completed, the iron catalyst layer is uniformly...
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