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Transparent conducting oxide film-plated glass and preparation method thereof

A transparent conductive, coated glass technology, applied in chemical instruments and methods, glass/slag layered products, layered products, etc., can solve problems such as narrow sunlight spectrum

Active Publication Date: 2013-12-18
QINGYUAN CSG NEW ENERGY SAVING MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, in order to solve the problem that the transparent conductive oxide coated glass used in traditional thin-film solar cells can absorb sunlight with a narrow spectral range, it is necessary to provide a transparent conductive oxide film that can absorb sunlight with a wide spectral range. Material coated glass and preparation method thereof

Method used

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  • Transparent conducting oxide film-plated glass and preparation method thereof
  • Transparent conducting oxide film-plated glass and preparation method thereof
  • Transparent conducting oxide film-plated glass and preparation method thereof

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preparation example Construction

[0039] like figure 2 The preparation method of the transparent conductive oxide-coated glass of one embodiment shown includes the following steps:

[0040] S10 , providing a glass substrate 10 .

[0041] The glass substrate 10 can be 1mm-5mm thick soda-lime ordinary flat colorless glass or low-iron ultra-clear flat glass.

[0042] After the glass substrate 10 is cleaned and dried, it can be used to prepare transparent conductive oxide-coated glass.

[0043] S20 , heating the glass substrate 10 to 500° C. to 650° C., using an atmospheric pressure chemical vapor deposition method, passing monosilane and an oxidizing agent respectively into the surface of the glass substrate 10 with an inert gas as a carrier, and reacting to form a shielding layer 20 .

[0044] Atmospheric pressure chemical vapor deposition (APCVD) is used in the coating area of ​​the furnace body, and monosilane and oxidant are respectively used as carriers of inert gas, and passed into S10 at 500°C~650°C to ...

Embodiment 1

[0065] In the APCVD reaction chamber, the glass substrate successively passes through the reaction zone with a space temperature of 620°C and 600°C, the concentration of monosilane is 0.1% and 0.15% by mole percentage, and the oxygen concentration ratio is 10% by mole percentage. % and 15%, the shielding layer made of silicon dioxide film material with a comprehensive refractive index of 1.52 and a thickness of 55nm was deposited.

[0066] The glass substrate that has been deposited with the shielding layer is introduced into the tin dioxide film deposition chamber, and the tin dioxide film is deposited three times successively. The reaction conditions are as follows:

[0067]

[0068] It is measured that the prepared transparent conductive oxide layer has a sheet resistance of 9Ω / □ and a transmittance of 80.2%. The single-point haze at 550nm is 16.2%, and the average haze at 380nm~780nm is 15.5%.

[0069] Depend on image 3 and Figure 4 It can be seen that the crystal ...

Embodiment 2

[0071] In the APCVD reaction chamber, the glass substrate successively passes through the reaction zone with a space temperature of 620°C and 620°C, the concentration of monosilane is 0.08% and 0.12% by mole percentage, and the oxygen concentration ratio is 15% by mole percentage. % and 20%, the shielding layer made of silicon dioxide with a comprehensive refractive index of 1.55 and a thickness of 60nm was deposited.

[0072] The glass substrate that has been deposited with the shielding layer is introduced into the tin dioxide film deposition chamber, and the tin dioxide film is deposited twice successively. The reaction conditions are as follows:

[0073]

[0074] It is measured that the prepared transparent conductive oxide layer has a sheet resistance of 8.9Ω / □ and a transmittance of 80.8%. The single-point haze at 550nm is 14.3%, and the average haze at 380nm~780nm is 12.9%.

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Abstract

The invention discloses a piece of transparent conducting oxide film-plated glass. The transparent conducting oxide film-plated glass comprises a glass matrix, a shielding layer, and a transparent conducting oxide layer, wherein the above-mentioned components are successively laminated. Grain sizes of the oxide of the transparent conducting oxide layer are gradually reduced from one side approaching the shielding layer to one side far away from the shielding layer. Because of controlling of the grain size of the oxide of the transparent conducting oxide layer of the transparent conducting oxide film-plated glass, the grain size of one side approaching the shielding layer is large and the grain size of one side far away from the shielding layer is relatively small. The film layer structure of the transparent conducting oxide layer has the high scattering characteristic for the solar light form the long wave length to the short wave length, so that the transparent conducting oxide film-plated glass can absorb the solar light with the wide spectral region. In addition, the invention also provides a preparation method for the transparent conducting oxide film-plated glass.

Description

technical field [0001] The invention relates to the field of special glass preparation, in particular to a transparent conductive oxide coated glass and a preparation method thereof. Background technique [0002] TCO (Transparent conducting oxide) glass, that is, transparent conductive oxide coated glass, is obtained by uniformly coating a layer of transparent conductive oxide on the surface of flat glass by physical or chemical coating methods. [0003] Transparent conductive oxide-coated glass acts as the front electrode of the cell in silicon-based thin-film solar cells, and plays the role of light transmission and current collection. In silicon-based thin film solar cells, the light absorption of amorphous silicon is mainly concentrated in the range of visible light (380nm ~ 780nm), and its cell structure is composed of P, I, N three layers of amorphous silicon films, of which the intrinsic amorphous silicon layer That is, the I layer is the generation region of photoge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B17/06C03C17/34
Inventor 何进刘明刚谭小安
Owner QINGYUAN CSG NEW ENERGY SAVING MATERIALS CO LTD
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