Preparation method of gallium oxide-doped membrane and gallium oxide-doped membrane

A gallium oxide film and gallium oxide technology, which is applied in the field of semiconductor material preparation, can solve problems such as the difficulty in realizing multiple types of gallium oxide films, safety, and effective doping, and achieve the effect of scientific steps and excellent conductive properties
CN103469299AActive Publication Date: 2013-12-25DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2013-12-25

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Abstract

The invention provides a preparation method of a gallium oxide-doped membrane and the gallium oxide-doped membrane. The preparation method of the gallium oxide-doped membrane comprises the following steps of: selecting a substrate which comprises target doping element; preparing gallium oxide membrane on the substrate by adopting a metal organic chemical vapor deposition method, to obtain a primary gallium oxide-doped membrane product; performing thermal treatment and activation on the prepared primary gallium oxide-doped membrane to obtain the gallium oxide-doped membrane. The preparation method of the gallium oxide-doped membrane is scientific and reasonable in steps, and the problems that the multiple varieties, safety and effective doping of the gallium oxide membrane are difficultly realized by adopting the currently metal organic chemical vapor deposition method can be effectively solved. The gallium oxide-doped membrane prepared by adopting the preparation method has excellent conductivity property.
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Description

technical field

[0001] The invention relates to a semiconductor material preparation technology, in particular to a preparation method of a doped gallium oxide film and the doped gallium oxide film. Background technique

[0002] The monoclinic β-phase gallium oxide material is the most stable. The monoclinic β-phase gallium oxide material has a direct bandgap structure with a forbidden band width of 4.9eV. Electronic devices and other aspects have important applications, and have become a research hotspot in the field of wide bandgap semiconductor materials. However, unintentionally doped (the doping source directly participates in the reaction) gallium oxide film exhibits high resistance characteristics, which greatly limits its application in the fields of light emission, detection and electronic devices.

[0003] In order to make the gallium oxide film exhibit excellent conductive properties, the best solution is to dope it and perform corresponding activation treatment....

Claims

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