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MEMS-based interdigital gap beam structure energy collector and manufacturing method thereof

The technology of an energy collector and a manufacturing method, which is applied in the field of interdigital gap beam structure energy collectors, can solve the problems of mass production constraints of the energy collector and the preparation of PZT thin films, etc., so as to improve the energy output efficiency and the output energy efficiency. , the effect of low power consumption

Inactive Publication Date: 2014-01-22
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in the research process of energy recovery of MEMS technology, the problem of preparing PZT thin films on cantilever beams with micron-scale voids is faced, which restricts the mass production of energy harvesters.

Method used

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  • MEMS-based interdigital gap beam structure energy collector and manufacturing method thereof
  • MEMS-based interdigital gap beam structure energy collector and manufacturing method thereof
  • MEMS-based interdigital gap beam structure energy collector and manufacturing method thereof

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Effect test

Embodiment 1

[0023] A MEMS-based energy harvester with an interdigitated gap beam structure, which consists of: a top layer PZT composite membrane beam 1, with two bottom supporting silicon beams 2 below the top layer PZT composite membrane beam, and the top layer PZT composite membrane beam The two ends of the beam and the bottom supporting silicon beam are respectively connected to the mass block 3 and the fixed block 4; wherein, the top layer PZT composite membrane beam includes a PZT beam layer 5, and an upper layer connected to the upper and lower layers of the PZT beam layer respectively. Metal electrode 6 and lower metal electrode 7.

[0024] When the device vibrates, the beam undergoes S-shaped bending (attached image 3 ) and pure bend (with Figure 4 ), when S-shaped bending, due to the different materials, the stress of the upper and lower beams is different, and the bending degree is also different. The PZT beam has a greater bending degree, resulting in an increase in the amo...

Embodiment 2

[0026] MEMS-based interdigitated gap beam structure energy collector described in embodiment 1, the sum of the width of the top layer PZT composite film beam and the width of the two bottom supporting silicon beams is equal to the width of the mass block; The width of the gap between the two bottom supporting silicon beams is the same as the width of the top layer PZT composite membrane beam.

Embodiment 3

[0028]A MEMS-based method for manufacturing an energy harvester with an interdigitated gap beam structure. First, using the PZT thin film preparation method and the MEMS bulk silicon method, a three-dimensional gap cavity structure is etched on a rectangular silicon substrate, and the upper and lower two-layer structures Form a void cantilever beam structure, and prepare a three-dimensional void silicon beam structure with a top PZT composite membrane beam and two bottom supporting silicon beams; after that, convert most of the mechanical energy generated by the vibration source to the top PZT composite membrane into effective electrical energy output, and improve Response frequency; at the same time, by adjusting the shape of the mass block on the free end of the top PZT composite membrane beam, the distance between the top PZT composite membrane beam and the bottom supporting silicon beam is adjusted to realize the resonant frequency range of the interdigitated beam structure ...

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Abstract

The invention provides an MEMS-based interdigital gap beam structure energy collector and a manufacturing method thereof. At present, in an MEMS technique energy recycling researching process, the problem of manufacturing a PZT film on a micrometer scale gap cantilever beam exists, and achievement of mass production of energy collectors is restricted. The method comprises the steps that a top PZT composite film beam and two bottom support silicon beams are provided, and the two ends of the top PZT composite film beam and the two ends of each bottom support silicon beam are connected with mass blocks and fixing blocks respectively, wherein the top PZT composite film beam comprises a PZT beam layer, an upper metal electrode and a lower metal electrode, the upper metal electrode is connected with the upper layer of the PZT beam layer, and the lower metal electrode is connected with the lower layer of the PZT beam layer. The MEMS-based interdigital gap beam structure energy collector is used for micro-electronic mechanical devices.

Description

Technical field: [0001] The invention relates to a MEMS-based energy harvester with an interdigital gap beam structure and a manufacturing method thereof. Background technique: [0002] The rapid development of microelectronics technology has made the power consumption of chips small enough to reach the level of nanowatts and microwatts, and the chip-level integrated microsystems are also in the order of microwatts and milliwatts. With the expansion of the application fields of these microsystems, and The problem of supporting power supply has become the key to restricting its further development. These systems require a self-contained, maintenance-free power supply to work without the need for power cords and rechargeable batteries. In order to solve the bottleneck problem of energy supply for microsystems, research on energy harvesters that obtain energy from the environment and convert it into electrical energy is carried out. This research has very important application...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00
Inventor 邱成军陈晓洁曲伟卜丹林连冬
Owner HEILONGJIANG UNIV
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