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Photoresist composition and method of forming photoresist pattern

A composition and photoresist technology, which can be applied to the photoengraving process of the pattern surface, the photosensitive material used in opto-mechanical equipment, optics, etc., and can solve the problems of poor processing window and affecting equipment yield.

Active Publication Date: 2018-02-27
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The presence of "necking" and "T-top" often results in a poor process window, including depth of focus and exposure latitude
These issues can lead to randomly disappearing contact holes or cause micro-bridging defects, such as in narrow trench or line pattern formation, adversely affecting device yield

Method used

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  • Photoresist composition and method of forming photoresist pattern
  • Photoresist composition and method of forming photoresist pattern
  • Photoresist composition and method of forming photoresist pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] Example 1: Synthesis of Poly(ECPMA / MCPMA / MNLMA / HADA) (MP-1)

[0093] The monomers ECPMA (5.092 g), MCPMA (10.967 g), MNLMA (15.661 g) and HADA (8.280 g) were dissolved in 60 g of propylene glycol monomethyl ether acetate (PGMEA). The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (27.335 g) was injected into a 500 mL three-neck flask equipped with a condenser and a mechanical stirrer, and degassed with nitrogen bubbling for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl 2,2-azobisisobutyrate) (0.858 g) was dissolved in 8 g of PGMEA, and the initiator solution was degassed with nitrogen gas bubbling for 20 minutes. The initiator solution was added to the reaction flask, and then the monomer solution was injected dropwise into the reactor, and added dropwise for 3 hours under vigorous stirring and nitrogen atmosphere. After the monomer injection was complete, the polymerization mixture was kept still at...

Embodiment 2

[0094] Example 2: Synthesis of Poly(MCPMA / OTDA / HADA)(MP-2)

[0095] Monomeric MCPMA (17.233g), OTDA (13.695g) and HADA (9.108g) were dissolved in 60g PGMEA. The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (30.837 g) was injected into a 500 mL three-necked flask equipped with a condenser and a mechanical stirrer, and degassed with nitrogen bubbling for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl 2,2-azobisisobutyrate) (2.359 g) was dissolved in 8 g of PGMEA, and the initiator solution was degassed with nitrogen gas bubbling for 20 minutes. The initiator solution was added to the reaction flask, and then the monomer solution was injected dropwise into the reactor, and added dropwise for 3 hours under vigorous stirring and nitrogen atmosphere. After the monomer injection was complete, the polymerization mixture was kept still at 80° C. for an additional hour. After a total of 4 hours of polymerization ti...

Embodiment 3

[0096] Example 3: Synthesis of Poly(MCPMA / OTDA) (MP-3)

[0097]Monomeric MCPMA (17.234g) and OTDA (22.766g) were dissolved in 60g PGMEA. The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (30.837 g) was injected into a 500 mL three-necked flask equipped with a condenser and a mechanical stirrer, and degassed with nitrogen bubbling for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl 2,2-azobisisobutyrate) (2.359 g) was dissolved in 8 g of PGMEA, and the initiator solution was degassed with nitrogen gas bubbling for 20 minutes. The initiator solution was added to the reaction flask, and then the monomer solution was injected dropwise into the reactor, and added dropwise for 3 hours under vigorous stirring and nitrogen atmosphere. After the monomer injection was complete, the polymerization mixture was kept still at 80° C. for an additional hour. After a total of 4 hours of polymerization time (3 hour feed and ...

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Abstract

Photoresist compositions and methods of forming photolithographic patterns. A photoresist composition, said photoresist composition comprising: a first polymer comprising an acid labile group; a second polymer, said second polymer comprising: The first unit formed by the first monomer, wherein: P is a polymerizable functional group; R1 is selected from substituted and unsubstituted C1-C20 linear, branched and cyclic hydrocarbons; Z is selected from substituted and unsubstituted linear or Spacer units of branched aliphatic and aromatic hydrocarbons and combinations thereof, optionally having one or more linking moieties selected from -O-, -S- and -COO-; and n is an integer from 0 to 5; and A second unit formed from a second monomer having a basic moiety, wherein the first monomer and the second monomer are different; wherein the second polymer does not contain an acid labile group and wherein the second polymer has a ratio a low surface energy of the first polymer; a photoacid generator; and a solvent.

Description

technical field [0001] The present invention relates to the preparation of electronic devices. More particularly, the present invention relates to photoresist compositions and photolithographic methods that allow the formation of fine patterns using a negative tone development process. Background technique [0002] Considerable efforts have been made from both materials and process perspectives to extend the practical resolution capabilities of positive tone development in immersion lithography methods. One of these embodiments includes Negative Tone Development (NTD), an image inversion technique that allows excellent image quality to be obtained using a light area mask used to print a critically dark area layer. NTD photoresists generally use resins with acid-labile groups and photoacid generators. Exposure to actinic radiation causes the photoacid generator to form an acid that initiates dissociation of the acid-labile groups in the resin during the post-exposure bake. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/038G03F7/09G03F7/00
CPCG03F7/004G03F7/0392G03F7/2041G03F7/0046G03F7/038G03F7/20G03F7/26H01L21/027G03F7/30
Inventor 朴钟根C·N·李C·安德斯D·王
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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