Top emission organic light-emitting device and manufacturing method thereof

A technology of electroluminescence and top emission, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, electrical components, etc. It can solve the problem of not considering the change of viewing angle, and achieve the effect of avoiding the change.

Active Publication Date: 2014-02-12
KUNSHAN VISIONOX DISPLAY TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this scheme obtains the maximum outgoing light intensity, it do

Method used

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  • Top emission organic light-emitting device and manufacturing method thereof
  • Top emission organic light-emitting device and manufacturing method thereof
  • Top emission organic light-emitting device and manufacturing method thereof

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preparation example Construction

[0105] The preparation method of formula 2-1~2-5 compound is as follows:

[0106]

[0107] Under nitrogen protection, 7.4 grams of bis(o-bromophenyl)dimethylsilane (see J.Organomet.Chem.1984,271,319-326 for the synthesis method) (20mmol) was added to a 500ml three-necked flask, and 150ml of anhydrous ether was added dissolve. Cool the reaction system to -80°C, slowly add 1.5M tert-butyllithium (59ml, 88mmol) dropwise, keep the reaction mixture at -80°C during the dropwise addition, continue to stir at this temperature for 1 hour after the dropwise addition is complete . Then add 3.65g benzophenone (20mmol), stir at low temperature for 30 minutes, then remove the cold bath, let the reaction system warm up to room temperature naturally, and continue to stir at room temperature for 3 hours. The reaction was quenched by adding saturated ammonium chloride solution, the product was extracted with ethyl acetate, and the organic phase was dried over anhydrous magnesium sulfate. ...

Embodiment 1

[0135] Ag was sputtered on the glass substrate as a reflective layer with a thickness of 150 nm, ITO was sputtered at 10 nm as the anode of the device, and the desired pattern was etched with O 2 Plasma treatment for 3 minutes. The resulting substrate was placed in vacuum, and 130 nm of a mixture of MTDATA and F4TCNQ was deposited by co-evaporation as a hole injection layer (HIL), where the weight of F4TCNQ was 4% by weight of MTDATA. Next, 10 nm of NPB was deposited as a hole transport layer (HTL). A 30 nm mixture of ADN and DPAVB was then co-evaporated as a light-emitting layer, where the weight of DPAVB was 5% of that of AND. Then 20 nm of Bphen was deposited as the electron transport layer (ETL). Keeping the degree of vacuum constant, through Li 3 During the evaporation process (temperature 600 °C), N was decomposed by evaporating 1 nm of Li as the electron injection layer (EIL), 20 nm of Ag as the cathode, and 40 nm of the organic material with the structure of formula...

Embodiment 2

[0141] Ag was sputtered on the glass substrate as a reflective layer with a thickness of 150 nm, ITO was sputtered at 10 nm as the anode of the device, and the desired pattern was etched with O 2 Plasma treatment for 3 minutes. The resulting substrate was placed in a vacuum, and 170 nm of a mixture of MTDATA and F4TCNQ was deposited by co-evaporation as a hole injection layer (HIL), where the weight of F4TCNQ was 4% by weight of MTDATA. Next, 10 nm of NPB was deposited as a hole transport layer (HTL). A mixture of CBP and Ir(ppy)3 of 30 nm was then co-evaporated as the light-emitting layer, where Ir(ppy) 3 The weight is 5% of the CBP weight. Then 20 nm of Bphen was deposited as the electron transport layer (ETL). Keep the vacuum constant, by KBH 4 During the evaporation process (temperature 400 °C), 1 nm of K was deposited as the electron injection layer (EIL), 20 nm of Ag was deposited as the cathode, and 40 nm of organic material with the structure of formula 1-3 was dep...

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Abstract

The invention discloses a top emission organic light-emitting device. A cathode layer of the top emission organic light-emitting device is plated with a covering layer, the covering layer is an organic material, the refractive index of the organic material is larger than 1.8 within the wavelength range of 450-650nm, and the energy gap (Eg) of the organic material is larger than 3.0eV. The invention further discloses a manufacturing method of the top emission organic light-emitting device. According to the top emission organic light-emitting device, the light transmittance of a cathode can be guaranteed, and meanwhile, the situation that a display screen changes with changes of visual angles can be avoided.

Description

technical field [0001] The invention belongs to the field of organic electroluminescent devices, and relates to a top-emitting organic electroluminescent device and a manufacturing method thereof. Background technique [0002] Organic light-emitting diodes, also known as organic electroluminescent devices (OLEDs), are divided into bottom-emitting organic electroluminescent devices and top-emitting organic electroluminescent devices according to the light emitting method. Bottom-emitting organic electroluminescent device (BEOLED), its transparent anode indium tin oxide ITO (or indium zinc oxide IZO) is grown on a glass substrate by sputtering, and the light emitted inside the device passes through the ITO (or IZO) successively. ), glass substrate injection. The display screen fabricated in this way has a relatively reduced area of ​​the display area and a lower aperture ratio of the display screen due to the fact that the driving circuit and the display area are fabricated o...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/56
CPCH10K50/858H10K71/00
Inventor 邱勇刘嵩张粲
Owner KUNSHAN VISIONOX DISPLAY TECH
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