Method for improving enrichment ratio of boron and phosphorus in ICP (inductively coupled plasma) impurity detection of trichlorosilane

A technology of trichlorosilane and detection process, which is applied in the field of improving boron and phosphorus enrichment rate in the process of ICP impurity detection of trichlorosilane

Inactive Publication Date: 2014-03-05
ORISI SILICON
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  • Method for improving enrichment ratio of boron and phosphorus in ICP (inductively coupled plasma) impurity detection of trichlorosilane
  • Method for improving enrichment ratio of boron and phosphorus in ICP (inductively coupled plasma) impurity detection of trichlorosilane
  • Method for improving enrichment ratio of boron and phosphorus in ICP (inductively coupled plasma) impurity detection of trichlorosilane

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[0008] The entire treatment process of the method must be performed under a Class 1000 laboratory environment, especially when volatilizing in a fume hood, it is guaranteed to be under a Class 1000 laboratory environment to prevent secondary pollution. Inductively coupled plasma emission spectrometer (ICP) is a spectrometer equipped with a hydrofluoric acid-resistant system, which needs to be equipped with a hydrogen-fluorine-resistant rectangular tube. The clean crucible made of PFA, the 25 or 50ml clean volumetric flask made of PFA, the infrared digital temperature control electric heating plate, the electronic balance and the pipette made of PFA used must be clean. The constant temperature electric heating plate must be a constant temperature non-open flame digital control electric heating plate. The key step in the method is the addition of ultra-pure water, and the specific surface area of ​​the relevant water droplets is a key technical parameter.

[0009] Give an examp...

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Abstract

The invention discloses a method for improving enrichment ratio of boron and phosphorus in ICP (inductively coupled plasma) impurity detection of trichlorosilane. According to the method, on the premise that no reagent causing secondary pollution is used, the enrichment effect of trace B and P in trichlorosilane is greatly improved. In general treatment process, the purposes of separating the matrix and enriching impurities are achieved mainly by volatilization of trichlorosilane, but the boiling points of the impurities B and P in trichlorosilane are low, so that the B and P are very easy to loss in the volatilization process. According to the invention, the adopted measures are usually as follows: adding reagents such as high-purity glycerinum, mannitol and acetonitrile are added into samples, but because the purities of the reagents cannot reach the electronic grade, new impurities are automatically added so as to affect the accuracy of the detection result. Through adopting the treatment method disclosed by the invention, the enrichment ratio of element B is improved by over 20% and enrichment ratio of element P even excesses 85%, and the method is verified by ICP-MS (inductively coupled plasma-mass spectrometry) detection.

Description

technical field [0001] The method relates to an impurity detection method in polysilicon production, in particular to a method for improving the enrichment rate of boron and phosphorus in the ICP impurity detection process of trichlorosilane. Background technique [0002] Trichlorosilane has a wide range of uses and is the key raw material for the production of semiconductor polysilicon and monocrystalline silicon. Its purity directly affects the quality of silicon. Strictly control the purity of trichlorosilane, especially to reduce boron and phosphorus (B, P) impurities. It becomes one of the key factors in the production of high-purity polysilicon and monocrystalline silicon products. [0003] At present, how to use ICP to accurately analyze boron and phosphorus (B, P) in trichlorosilane has become the focus of the industry. In recent years, although there are many reports on the detection of impurities in trichlorosilane by ICP at home and abroad, there is no unified st...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/71G01N1/28
Inventor 贺珍俊李辉刘淑萍张耀平高云龙曹忠
Owner ORISI SILICON
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