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Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device

A technology of resist pattern and cleaning agent, applied in semiconductor/solid-state device manufacturing, detergent composition, chemical instrument and method, etc., can solve the problems of undisclosed improvement of LWR effect, fine pattern damage, etc.

Inactive Publication Date: 2014-03-12
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This reduced size of the resist pattern causes a problem that when the cleaning agent dries in the development of the resist pattern, the fine pattern is broken due to surface tension
Furthermore, the effect of improving LWR is not disclosed

Method used

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  • Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device
  • Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device
  • Rinsing agent for lithography, method for forming a resist pattern, and method for producing a semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0119]

[0120] The following (A) linear alkanediol, (B) additive, (C) water-soluble polymer, and (D) solvent are provided.

[0121] (A) Linear alkanediol

[0122] A-1: 1,2-heptanediol (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0123] A-2: 1,2-hexanediol (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0124] A-3: 1,2-octanediol (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0125] A-4: 1,8-octanediol (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0126] (B) Additives

[0127] B-1: Surfactant based on hexyldimethylolpropionate (surfactant, manufactured by Nikko Chemicals Co., Ltd.)

[0128] B-2: Polyoxyethylene lauryl ether-based surfactant (surfactant, manufactured by Kao Corporation)

[0129] B-3: N, N, N', N'-tetramethylethylenediamine (manufactured by Kanto Chemical Co., Inc.)

[0130] B-4: Benzalkonium chloride (surfactant, manufactured by Wako Pure Chemical Industries, Ltd.)

[0131] (C) Water-soluble polymer

[0132] C-1: Polyvinyl ...

Embodiment 2

[0186]

[0187] Referring to the examples described in US Patent Application No. US2011 / 0159429A1, the resist (chemically amplified positive resist) material for evaluation was prepared using the following formulation.

[0188] [Formulation of resist material]

[0189] Resin: a resin represented by the following structural formula

[0190]

[0191] 40 parts by mass

[0192] Additive: 0.1 parts by mass of trioctylamine (manufactured by Aldrich)

[0193] Solvent: Propylene glycol monomethyl ether acetate (manufactured by Kanto Chemical Co., Inc.)

[0194] 1100 parts by mass

[0195] Solvent: γ-butyrolactone (manufactured by Tokyo Chemical Industry Co., Ltd.)

[0196] 200 parts by mass

[0197] ARC-39 (manufactured by Nissan Chemical Industries, Ltd.) was formed as an underlying organic film on a silicon substrate to obtain a film thickness of 82 nm. The resist m...

Embodiment 3

[0206]

[0207] like Figure 1A As shown, an interlayer insulating film 12 is formed on a silicon substrate 11 . Then, if Figure 1B As shown, a titanium film 13 is formed on the interlayer insulating film 12 by sputtering. Next, if Figure 1C As shown, a resist pattern 14 is formed by electron beam exposure, and the titanium film 13 is patterned by reactive ion etching using the formed resist pattern 14 as a mask to form an opening 15a. Subsequently, if Figure 1D As shown, using the titanium film 13 as a mask, reactive ion etching is performed to remove the resist pattern, and to form an opening 15 b in the interlayer insulating film 12 .

[0208] Next, the titanium film 13 is removed by wet processing. like Figure 1E As shown, a TiN film 16 is formed on the interlayer insulating film 12 by sputtering, and then a Cu film 17 is formed on the TiN film 16 by electroplating. Next, if Figure 1F As shown, chemical mechanical polishing (CMP) is performed to flatten the l...

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Abstract

To provide a rinsing agent for lithography, which contains C6-C8 straight-chain alkanediol, and water.

Description

technical field [0001] Embodiments discussed herein relate to cleaning agents for photolithography, resist patterning methods, and semiconductor device manufacturing methods. Background technique [0002] Due to the increase in the degree of integration, there is a need to form fine patterns in semiconductor devices such as large scale integration (LSI). Currently, the smallest pattern size reaches the range of 100nm or less. [0003] Formation of such fine patterns in semiconductor devices has been achieved by shortening the wavelength of light from a light source that exposes the device. Currently, fine pattern formation has been performed by liquid immersion lithography in which exposure is performed through water using a light source emitting an argon fluoride (ArF) excimer laser light at a wavelength of 193 nm. As for further down-sizing, studies have been conducted to obtain patterns with a size of 30nm or less by electron beam exposure using electron beams or extrem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42G03F7/00H01L21/027
CPCG03F7/422H01L21/308H01L21/0206G03F7/40H01L21/76802C11D1/00C12Y208/02009G03F7/325G03F7/343
Inventor 小泽美和今纯一野崎耕司
Owner FUJITSU LTD