High-thermal-conductivity and high-electrical-conductivity graphene film and preparation process thereof

A technology of conductive graphite and preparation process, which is applied in the direction of cable/conductor manufacturing, conductive layer on insulating carrier, conductive material dispersed in non-conductive inorganic materials, etc., can solve the problems of poor thermal conductivity and electrical conductivity, insufficient and other problems, and achieve Good corrosion resistance, improve bonding strength, and increase the effect of bonding force

Active Publication Date: 2014-03-12
NINGBO MORSH NEW MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a graphene film with high thermal conductivity and electrical conductivity in order to overcome the probl

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1) Graphene and nano-diamonds with a particle size of 20nm are prepared at a weight ratio of 5:1 with potassium nitrate to form a dispersion of 20% by weight, and a surfactant of 1% by weight of the dispersion is added, ultrasonically dispersed 20min, standby;

[0030] 2) Add the dispersion liquid after ultrasonic dispersion in step 1) to an adhesive composed of 50% by weight of melamine resin, 20% of bisphenol A epoxy vinyl ester resin and 30% of polypyrrole, and determine The content of graphene is 10%, stir evenly at 80-120 ℃, stand-by;

[0031] 3) Take a high-purity aluminum plate, first clean it ultrasonically in an acetone mixed solution for 15 minutes, and then polish it so that Ra≤0.01μm; once coat it, and remove the anodized aluminum film; The holes were expanded in the solution for 20 minutes, the inner diameter of the holes was 20 nm, the distance between the holes was 50 nm, and the depth of the holes was 2±0.5 μm. Then apply the mixed liquid in step 2) on...

Embodiment 2

[0033] 1) Graphene and nano-diamonds with a particle size of 100nm are formulated into a 5% dispersion by weight with potassium nitrate at a weight ratio of 10:1, and 3% by weight of the dispersion is added. Surfactant, ultrasonically dispersed 30min, stand by;

[0034]2) Add the dispersion liquid after ultrasonic dispersion in step 1) to an adhesive composed of 20% by weight of melamine resin, 30% of bisphenol A epoxy vinyl ester resin and 50% of polypyrrole, and determine The content of graphene is 0.1%, stir evenly at 100 ℃, stand-by;

[0035] 3) Take a high-purity aluminum plate, first clean it ultrasonically in an acetone mixed solution for 30 minutes, and then polish it so that Ra≤0.01μm; once coat it, and remove the anodized aluminum film; The pores were expanded in the solution for 15 minutes, the inner diameter of the pores was 60 nm, the distance between the pores was 40 nm, and the depth of the pores was 2±0.5 μm. Then apply the mixed liquid in step 2) on the subs...

Embodiment 3

[0037] 1) Graphene and nano-diamonds with a particle size of 200nm are prepared into a 10% by weight dispersion with potassium nitrate at a weight ratio of 1:1, and 5% by weight of the dispersion is added. Surfactant, ultrasonically dispersed 10min, standby;

[0038] 2) Add the dispersion liquid after ultrasonic dispersion in step 1) to an adhesive composed of melamine resin 30%, bisphenol A type epoxy vinyl ester resin 50% and polypyrrole 20% by weight, and determine The content of graphene is 50%, stir evenly under 120 ℃, stand-by;

[0039] 3) Take a high-purity aluminum plate, first clean it ultrasonically in an acetone mixed solution for 15 minutes, and then polish it so that Ra≤0.01μm; once coat it, and remove the anodized aluminum film; The holes were expanded in the solution for 20 minutes, the inner diameter of the holes was 20 nm, the distance between the holes was 50 nm, and the depth of the holes was 2±0.5 μm. Then apply the mixed liquid in step 2) on the substrat...

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Abstract

The invention relates to the technical field of films and particularly relates to a high-thermal-conductivity and high-electrical-conductivity graphene film and a preparation process thereof. The film is prepared by modifying graphene and nano diamond and is 0.5-500 microns thick, wherein the weight ratio of graphene to nano diamond is (1-10):1. According to the high-thermal-conductivity and high-electrical-conductivity graphene film of the invention, by modifying graphene and nano diamond, the thermal conductivity and the electrical conductivity of the film are greatly enhanced, and the film is enabled to have the characteristics of being resistant to near infrared/ultraviolet radiation, lower in reflectivity, high in transparency and the like. In addition, the adhesion force between the film and a substrate is improved, the adhesion strength is improved, and the film has good corrosion resistance.

Description

technical field [0001] The invention relates to the technical field of thin films, in particular to a graphene thin film with high thermal and electrical conductivity and a preparation process thereof. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is a planar film composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice, and a two-dimensional material with a thickness of only one carbon atom. Graphene is currently the thinnest but also the hardest nanomaterial in the world. It is almost completely transparent and only absorbs 2.3% of light. Electron mobility over 15000cm 2 ; / V·s, which is higher than that of carbon nanotubes or silicon crystals, and the resistivity is only about 10 -6 Ω·cm, which is lower than copper or silver, and is currently the material with the smallest resistivity in the world. Because of its extremely low resistivity and extremely fast electr...

Claims

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Application Information

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IPC IPC(8): H01B1/18H01B5/14H01B13/00
Inventor 唐长林王樑
Owner NINGBO MORSH NEW MATERIALS
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