Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof

A silicon dioxide and hollow nanotechnology, which is applied in the fields of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of low manufacturing efficiency, difficulty in realizing controllable preparation of metal-silica thin film hollow nanostructure arrays, and high cost , to achieve the effect of large interior space

Active Publication Date: 2014-03-19
NAT UNIV OF DEFENSE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these preparation processes have high cost, low manufacturing efficiency, and are limited by the processing method, so it is difficult to realize the controllable preparation of metal-silicon dioxide thin film hollow nanostructure arrays.

Method used

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  • Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof
  • Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof
  • Metal-silicon dioxide multilayer film hollow nano structure array and preparation method thereof

Examples

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Effect test

Embodiment 1

[0044] Embodiment 1: Gold-chromium-silicon dioxide three-layer film nano-pyramid structure array and its preparation method

[0045] A metal-silicon dioxide multilayer film hollow nanostructure array of the present invention is specifically a gold-chromium-silicon dioxide three-layer film nano-pyramid structure array, such as Figure 11 As shown, it includes a glass substrate 1, and the surface of the glass substrate 1 is sequentially provided with a silicon dioxide film nano-pyramid structure array 2 (that is, a silicon dioxide film hollow nano-structure array), a chromium film nano-structure array 3 and a gold film Nanostructure arrays4. The gold-chromium-silicon dioxide three-layer thin film nano-pyramid structure array is a two-dimensional periodically arranged hexagonal array structure, that is, the silicon dioxide film nano-pyramid structure array 2, the chromium film nano-structure array 3 and the gold film nano-structure array 4 are all It is a two-dimensional perio...

Embodiment 2

[0066] Example 2: Gold-silver-silicon dioxide three-layer thin film nano-cylinder structure array and its preparation method

[0067] A metal-silicon dioxide multilayer thin film hollow nanostructure array of the present invention is specifically a gold-silver-silicon dioxide three-layer thin film nano cylinder structure array, such as Figure 13 As shown, a glass substrate 1 is included, and a silicon dioxide film nano-cylinder structure array 5, a silver film nano-structure array 6 and a gold film nano-structure array 4 are sequentially arranged on the surface of the glass substrate 1 from bottom to top. The gold-silver-silica three-layer thin-film nano-cylindrical structure array is a two-dimensional periodic array structure of hexagonal arrays, that is, the silicon dioxide thin-film nano-cylindrical structure array 5, the silver film nano-structure array 6 and the gold film nano-structure array 4 are two-dimensional periodic arrangement of the hexagonal array structure. ...

Embodiment 3

[0085] Example 3: Aluminum-chromium-silicon dioxide three-layer thin film nanocap structure array and its preparation method

[0086] A metal-silicon dioxide multilayer thin film hollow nanostructure array of the present invention is specifically a gold-silver-silicon dioxide three-layer thin film nanocap structure array, such as Figure 15 As shown, a glass substrate 1 is included, and a silicon dioxide film nanocap structure array 7, a chromium film nanostructure array 3 and an aluminum film nanostructure array 8 are sequentially arranged on the surface of the glass substrate 1 from bottom to top. The gold-silver-silica three-layer thin film nanocap structure array is a two-dimensional periodic array structure of hexagonal arrays, that is, the silicon dioxide thin film nanocap structure array 7, the chromium film nanostructure array 3 and the aluminum film nanostructure array 8 are all It is a two-dimensional periodic hexagonal array structure. The maximum diameter of the...

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Abstract

The invention discloses a metal-silicon dioxide multilayer film hollow nano structure array and a preparation method thereof. The metal-silicon dioxide multilayer film hollow nano structure array comprises a glass substrate, wherein a silicon dioxide film hollow nano structure array and more than one layer of metal film nano structure array are arranged on the surface of the glass substrate sequentially from bottom to top. The preparation method comprises the process steps such as preparation of single-layer ordered polystyrene nanosphere dense arrangement, preparation of single-layer ordered polystyrene nanosphere non-dense arrangement, preparation of a metal nano-pore array mask, preparation of a nano-structure array template, and preparation of a silicon dioxide film hollow nano-structure array and a metal-silicon dioxide multilayer film hollow nano-structure array. The nano-structure array disclosed by the invention has the advantages of large area, high density, good processability and the like; and the preparation method is low in cost and has high efficiency and good compatibility, thereby bringing convenience to the study on the optical properties, magnetic properties, catalytic properties and the like of the nano-structure array.

Description

technical field [0001] The invention belongs to the technical field of nanostructure manufacture, and in particular relates to a metal-silicon dioxide multilayer film hollow nanostructure array and a preparation method thereof. Background technique [0002] Surface plasmon resonance is a special optical property of metal nanostructures, which can make metal nanostructures have special dielectric properties. The electromagnetic field enhancement effect, in principle, makes the light field spatially controllable at the nanoscale, and has great application prospects in surface-enhanced Raman scattering, plasma subwavelength lithography, and solar cells. [0003] Research on the preparation technology of periodic metal nanostructures can controllably adjust the configuration, size, material and matrix parameters of nano-elements, which is conducive to in-depth study of the pathway and mechanism of charge movement and energy transfer on the surface of metal nanostructures. It is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00B82B3/00
Inventor 董培涛吴学忠邸荻陈剑王浩旭王朝光王俊峰
Owner NAT UNIV OF DEFENSE TECH
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