Thermochromic film material and preparation method thereof
A thin-film material and thermochromic technology, which is applied in metal material coating process, vacuum evaporation coating, coating, etc., can solve the problems that cannot meet the requirements of tiny spacecraft, the range of emissivity changes is small, and it is far below room temperature. , to achieve the effect of light weight, large change range and high change temperature range
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Embodiment 1
[0018] Such as figure 1 , the film material of the present invention is prepared according to the following steps:
[0019] La 0.7 Ca 0.165 Sr 0.135 MnO 3 Preparation of film samples
[0020] 1. Preparation of La by solid phase reaction method 0.7 Ca 0.165 Sr 0.135 MnO 3 Thermochromic bulk materials (Li Qiang, Kuang Liu, Xuan Yimin. Preparation and radiation characteristics of thermochromic materials with variable emissivity. Journal of Engineering Thermophysics, 2009,30(6):1006—1008), specific process high purity La 2 o 3 , SrCO 3 and MnO 2 The powder is stoichiometrically proportioned, mixed evenly, and then subjected to repeated grinding and high-temperature calcination (1000°C), the calcined powder is ground evenly, and then a binder is added to it and mixed evenly, and then the evenly mixed powder is introduced into the mold and pressed The sheet is shaped and sintered again at high temperature to form a block (1400°C). The bulk material is then machined to ...
Embodiment 2
[0033] La 0.7 Ca 0.165 Sr 0.135 MnO 3 Preparation of film samples
[0034] Steps 1 to 4 are the same as in Example 1
[0035] 5. Fill the sputtering chamber with a mixed gas of argon and oxygen, adjust the air pressure between 0.8Pa, adjust the oxygen partial pressure at 33v%, and prepare La by radio frequency sputtering 0.7 Ca 0.165 Sr 0.135 MnO 3 Thin film, sputtering power at 90W;
[0036] 6. After the sputtering is over, wait for the sputtering chamber to cool down, open the vent valve, expose the sputtering chamber to the atmosphere, and take out the film sample;
[0037] 7. Anneal the film sample in an oxygen flow of 1 atmosphere. The heating temperature curve is heated from room temperature to 400°C at a heating rate of 3°C / min, and then heated to 700°C at a heating rate of 1°C / min, and kept for 2 hours. , then cooled to 400°C at a rate of 1°C / min, and finally cooled to room temperature at a rate of 3°C / min to obtain the product
Embodiment 3
[0039] La0.7 Ca 0.165 Sr 0.135 MnO 3 Preparation of film samples
[0040] Steps 1 to 4 are the same as in Example 1
[0041] 5. Fill the sputtering chamber with a mixed gas of argon and oxygen, adjust the air pressure between 0.8Pa, adjust the oxygen partial pressure at 50v%, and prepare La by radio frequency sputtering 0.7 Ca 0.165 Sr 0.135 MnO 3 Thin film, sputtering power at 90W;
[0042] 6. After the sputtering is over, wait for the sputtering chamber to cool down, open the vent valve, expose the sputtering chamber to the atmosphere, and take out the film sample;
[0043] 7. Anneal the film sample in an oxygen flow of 1 atmosphere. The heating temperature curve is heated from room temperature to 400°C at a heating rate of 3°C / min, then heated to 700°C at a heating rate of 1°C / min, and kept for 2 hours. , followed by cooling down to 400°C at a rate of 1°C / min, and finally cooling down to room temperature at a rate of 3°C / min to obtain the product.
[0044] The La p...
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