A new type of front electrode for crystalline silicon solar cells

A solar cell, front electrode technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of easy generation of microcracks or fragments, unable to continue to collect current, lack of flexibility of silicon, etc., to improve anti-oxidation performance, open circuit Effects of reduced voltage and series resistance and increased fill factor

Inactive Publication Date: 2016-12-07
SHANDONG YUTAI OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The front electrode of the solar cell prepared by the traditional solar cell preparation process is to print the silver paste with a purity of 80% on the N-shaped surface of the cell by screen printing. Since the main raw material of the traditional paste is silver, the rest is glass. Composed of material and alcohol, after printing, the eutectic point is reached at a sintering temperature of 840°C to form an Ag-Si alloy. Due to the lack of flexibility of silicon, it is very easy to produce microcracks or fragments. After cracks or fragments, it is impossible to continue to collect current, resulting in partial failure or scrapping of the cell

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  • A new type of front electrode for crystalline silicon solar cells
  • A new type of front electrode for crystalline silicon solar cells
  • A new type of front electrode for crystalline silicon solar cells

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Embodiment Construction

[0013] Accompanying drawing is a kind of specific embodiment of the present invention. The novel front electrode of the crystalline silicon solar cell is characterized in that: the novel front electrode 1 is located in the groove 2 of the n-type surface of the crystalline silicon cell, and is a Cu-Ag-Ni low-silver conductive alloy electrode, with copper as the substrate, Silver and nickel are used as additional elements, and the width d of the groove 2 is 45 μm, which is only three-quarters of the width of the traditional electrode; the groove 2 is prepared by laser, and the depth of the laser is determined according to the square resistance of the n-type layer. The new front electrode 1 is buried inside the n-type layer, which increases the area for receiving current and reduces the bulk resistance; the Cu-Ag-Ni series low-silver conductive alloy electrode is prepared by electroless plating, and the prepared new front electrode 1 Since the physical strength is improved and no...

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Abstract

The invention relates to the field of crystal silicon solar cells, in particular to a novel front surface electrode of a crystal silicon solar cell. The novel front surface electrode of the crystal silicon solar cell is characterized in that the novel front surface electrode is positioned in a cutting notch of a crystal silicon cell n-type surface, is a Cu-Ag-Ni serial low-silver conductive alloy electrode and uses Cu as a matrix and Ag and Ni as additive elements and the width d of the cutting notch is 45 microns; the cutting notch is prepared by laser radiation; the Cu-Ag-Ni serial low-silver conductive alloy electrode is prepared by an electroless plating method; as having improved physical strength and not forming alloy with a silicon body, the prepared novel front surface electrode is not broken after a crystal silicon cell piece generates cracks and can continue achieving the function of current collecting. Compared with an Ag-Si alloy, the novel front surface electrode has the advantage of saving Ag by more than 40%, the electric performance of the cell piece adopting the novel electrode is greatly improved by testing, and the improvements mainly comprise that the open circuit voltage and serial resistance are reduced and a filling factor is improved.

Description

technical field [0001] The invention relates to the field of crystalline silicon solar cells, in particular to a novel front electrode of a crystalline silicon solar cell. Background technique [0002] The front electrode of the solar cell prepared by the traditional solar cell preparation process is to print the silver paste with a purity of 80% on the N-shaped surface of the cell by screen printing. Since the main raw material of the traditional paste is silver, the rest is glass. Composed of material and alcohol, after printing, the eutectic point is reached at a sintering temperature of 840°C to form an Ag-Si alloy. Due to the lack of flexibility of silicon, it is very easy to produce microcracks or fragments. After cracks or fragments, the current cannot continue to be collected, resulting in partial failure or scrapping of the cell. Contents of the invention [0003] Aiming at the above problems, the present invention provides a novel front electrode of a crystallin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022425Y02E10/50
Inventor 刘若飞秦广飞金保华燕飞汪文渊王鹏张建亮
Owner SHANDONG YUTAI OPTOELECTRONICS TECH CO LTD
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