Conductive metal interconnection wire and manufacturing method thereof

Abstract

The invention provides a conductive metal interconnection wire. The conductive metal interconnection wire comprises at least one conductive metal film layer and at least one high melting point metal film layer with thickness of a nanometer magnitude which are mutually deposited on a substrate in a reciprocating mode, and sum of thickness of the at least one conductive metal film layer and thickness of the at least one high melting point metal film layer is preset thickness. According to the conductive metal interconnection wire and a manufacturing method thereof, periodic reciprocating deposition of the at least one conductive metal film layer and the at least one high melting point metal film layer with thickness of the nanometer magnitude is carried out, deposition of the high melting point metal film layer at proper thickness can greatly absorb stress of the conductive metal film layers, so stress in the conductive metal film layers can be released, a hill phenomenon is effectively inhibited, excessive growth of a conductive metal crystal grain is further restricted, and thereby surface roughness of a whole film can be reduced, and the conductive metal interconnection wire manufactured through the deposition method has excellent performance and satisfies application requirements of mass production.

Description

technical field [0001] The invention relates to the field of metal interconnection preparation, in particular to a conductive metal interconnection and a preparation method thereof. Background technique [0002] With the development of flat panel display technology, OLED (Organic Light-Emitting Diode) technology has gradually matured, and large-size OLED technology has become the focus of competition among various panel manufacturers. If the traditional Al (aluminum) process is used to make metal interconnection lines, it can no longer meet its signal transmission requirements. As a metal interconnection, pure aluminum can be used in the field of large-scale semiconductor display because of its low resistivity, but because of its large thermal expansion coefficient, mismatch with the substrate, and low melting point, it can be used as a metal interconnection in sputtering In the process, serious Hillock (hillock) phenomenon will occur. In practical applications, it will cau...

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Problems solved by technology

However, the conductivity of the alloyed aluminum alloy decreases, and it loses the meaning of using pure aluminum as an interconnection line, and this method is only suitable for depositing metal interconnection lines with a small thickness, not for pure aluminum.

[0004] The metal interconnection wires in the backplane of the flat panel display are generally

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