Algan/gan HEMT device structure and fabrication method based on depletion type trench gate

Abstract

The invention discloses a depletion-type grating AlGaN / GaN HEMT structure and a manufacturing method thereof. The structure and the manufacturing method enable an existing AlGaN / GaN HEMT to obtain high frequency. The structure comprises a substrate, an intrinsic GaN layer, an AlN isolation layer, an intrinsic AlGaN layer, an AlGaN doping layer, a gate electrode, a source electrode, a drain electrode, an insulation layer, a passivating layer and silicide used for adjusting channel electric fields. The AlGaN doping layer is located on the upper portion of the intrinsic AlGaN layer, the electrode layers and the insulation layer are located on the upper portion of the AlGaN layer, and the silicide is located on the upper portion of the insulation layer. A depletion-type AlGaN / GaN heterojunction material grows on the substrate in an epitaxy mode. A grating, the source electrode and the drain electrode are formed on the structure, then the insulation layer is deposited, and the silicide including NiSi, TiSi2 and the like is formed on the insulation layer between a gate drain area and a gate source area. Ultimately, the passivating layer is deposited and passivating of a component is achieved. The structure has the advantages of being high in frequency, process repeatability and controllability, low in on resistance and high in work frequency.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the manufacture of semiconductor devices, in particular to an AlGaN / GaN HEMT device structure and manufacturing method based on a depletion-type trench gate structure, which can be used to manufacture low-on-resistance, high-frequency depletion-type High Electron Mobility Transistors. Background technique [0002] In recent years, the third bandgap semiconductor represented by SiC and GaN has the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high saturated electron velocity and high concentration of two-dimensional electron gas at the heterojunction interface. It has received widespread attention. In theory, high electron mobility transistor HEMT, light emitting diode LED, laser diode LD and other devices made of these materials have obvious superior characteristics than existing devices, so in recent years, researchers at home...

AI Technical Summary

Problems solved by technology

AlGaN / GaN heterojunction electron mobility transistors can achieve very high frequencies, but often at the expense of high voltage withstand characteristics

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