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Hollow structure material as well as preparation method and use thereof

A technology with hollow structure and purpose, applied in the field of electrochemical energy storage, can solve problems such as poor cycle stability, and achieve the effect of easy realization and good repeatability

Inactive Publication Date: 2014-05-07
NANJING AMPRIUS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0017] The present invention aims at the defects of poor cycle stability of active materials in the process of charging and discharging in the prior art, and provides a hollow structure material that can improve the cycle stability of electrodes while maintaining high energy density

Method used

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  • Hollow structure material as well as preparation method and use thereof
  • Hollow structure material as well as preparation method and use thereof
  • Hollow structure material as well as preparation method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] A method for preparing a hollow structure material, comprising the following steps:

[0046] 1) Using silicon particles as the original material, the surface of silicon particles is oxidized by heating. The silicon particles are placed in a tube-type rotary furnace and heated to 1050 degrees Celsius. During this process, water vapor is continuously introduced to speed up the oxidation rate. The surface of the silicon particles is heated at a high temperature to form an oxide layer (silicon dioxide layer) with a uniform thickness, and the intermediate product A is obtained. Wherein, the thickness of the oxide layer is controlled by adjusting the high temperature heating time.

[0047] 2) Add the intermediate product A obtained in step 1) to tromethamine buffer solution (PH=8, 0.1M) containing dopamine. The mass ratio of product A, dopamine and tromethamine buffer solution is 3:1:60, the above mixed solution is stirred, and after 24 hours of stirring, the surface of pro...

Embodiment 2

[0054] A method for preparing a hollow structure material, comprising the following steps:

[0055] 1) Using silicon particles as the original material, the surface of silicon particles is oxidized by heating. The silicon particles are heated to 1000 degrees Celsius in a tube-type rotary furnace, and water vapor is continuously fed in during the process to speed up the oxidation rate. The surface of the silicon particles is heated at a high temperature to form an oxide layer (silicon dioxide layer) with a uniform thickness, and the intermediate product A is obtained. Wherein, the thickness of the oxide layer is controlled by adjusting the high temperature heating time.

[0056] 2) Add the intermediate product A obtained in step 1) into tromethamine buffer solution containing dopamine, the concentration of tromethamine buffer solution is 0.001M. The mass ratio of product A, dopamine and tromethamine buffer solution is 0.05:1. Stir the above mixed solution. After 24 hours of s...

Embodiment 3

[0060] A method for preparing a hollow structure material, comprising the following steps:

[0061] 1) Using silicon particles as the original material, the surface of silicon particles is oxidized by heating. The silicon particles are heated in a tube-type rotary furnace to 1100 degrees Celsius, and water vapor is continuously fed in during the process to speed up the oxidation rate. The surface of the silicon particles is heated at a high temperature to form an oxide layer (silicon dioxide layer) with a uniform thickness, and the intermediate product A is obtained. Wherein, the thickness of the oxide layer is controlled by adjusting the high temperature heating time.

[0062] 2) Add the intermediate product A obtained in step 1) into tromethamine buffer solution containing dopamine, the concentration of tromethamine buffer solution is 10M. The mass ratio of product A to dopamine is 50:1. Stir the above mixed solution. After 24 hours of stirring, the surface of product A is...

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Abstract

The invention discloses a hollow structure material. The hollow structure material comprises silicon particles and an amorphous carbon shell, wherein the silicon particles are arranged in the amorphous carbon shell. The hollow structure material has the advantages that a hollow part between a silicon kernel and the carbon shell can be used for volume expansion of silicon; direct contact between the silicon and an electrolyte solution is blocked by a carbon shell membrane of a surface layer, so that a steady solid-state electrolyte solution interface can be formed on the surface of the carbon shell; and amorphous carbon is high in electronic conductivity and high in ionic conductivity, so that lithium ions and electrons can be freely transported through the amorphous carbon. A carbon-coated hollow material is applied to an existing slurry coating method electrode preparation technology and lays a foundation for industrial application. The invention also discloses a preparation method of the hollow structure material. The preparation method does not relate to dangerous gas such as silicane or similar expensive instruments for chemical vapor deposition. The large-scale production manufacturing of the hollow structure material is easily realized. A production condition control requirement is not strict, so that the hollow structure material is high in repeatability.

Description

technical field [0001] The invention belongs to the technical field of electrochemical energy storage, and in particular relates to a hollow structural material and its preparation method and application. Background technique [0002] With the continuous expansion of the mobile electronics industry and the electric vehicle industry, how to increase the energy density of electrochemical energy storage devices has become an increasingly urgent technical problem to be solved. It requires that the electrode materials of energy storage devices have both high volume capacity and mass capacity, stable electrochemical performance, low cost and large-scale production and manufacturing capabilities. Existing electrode materials with high quality and volumetric capacity, such as silicon, germanium, tin, tin oxide, etc., have poor cycle stability due to their drastic volume changes during charge and discharge. In addition, the unstable solid-state electrolyte interface formed on the su...

Claims

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Application Information

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IPC IPC(8): H01M4/38H01M4/62
CPCB82Y30/00H01M4/386H01M4/625H01M4/628Y02E60/10
Inventor 周萨刘祖琴韩松
Owner NANJING AMPRIUS
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