The invention discloses a packaging method of a double-sided bump packaging
chip, which overcomes the defects that the double-sided bump packaging
chip is easy to oxidize and leak
electricity, and ensures the quality and the working stability of the double-sided bump packaging
chip. The method is characterized by comprising the following steps of: after the operation on the front surface of a
wafer is finished, bonding the front surface of the
wafer with glass and then reversely arranging,
grinding a Si surface on the back surface of the
wafer, releasing stress, operating a SiO2 layer on the surface of the Si layer,
sputtering a Ti / Cu layer on the surface of the SiO2 layer,
electroplating Cu on the surface of the Ti / Cu layer to form an electroplated Cu layer, and forming an RDL (Reduced DL) of a corresponding pattern on the back surface of the wafer through photoetching, the manufacturing method comprises the following steps of: preparing a back surface of a wafer through photoetching, Ti / Cu layer
etching and
photoresist removing operation, performing
plasma treatment on the back surface of the wafer after the back surface Cu operation is completed, performing protection on an RDL surface in a
chemical plating manner, performing inversion again, performing de-bonding by irradiating UV light, separating glass from the wafer, and performing mechanical
cutting to form a complete
single chip.