Processing method of all metal channel microstructure with great thickness and high depth-to-width ratio

Abstract

The invention discloses a processing method of an all metal channel microstructure with great thickness and a high depth-to-width ratio. The processing method comprises the particular technical steps of spin-coating a copper substrate in a set size with a layer of SU-8 photoresist, performing technical procedures such as prebaking, exposing, postbaking, developing, and film upright to form a micro-electroforming female mold, obtaining 1 / 2 structures by a micro-electroforming and striping technology, and finally, combining the two 1 / 2 structures into a whole by a pin connection technology. According to the method, the all metal channel microstructure with the great thickness and the high depth-to-width ratio can be obtained by a once gluing technology together with the pin connection technology; the problem in verticality of a side wall caused by exposure and the problem of photoresist residual in a channel caused by incomplete striping when a great thickness glue film is obtained by using the gluing technology for many times are avoided; and a processing bottle neck in the structural thickness and the depth-to-width ratio when the all metal microstructure is prepared by the conventional UV-LIGA (Ultraviolet-Lithographie, Galanoformung and Abformung) technology and the deep reactive ion etching technology are broken through.

Description

Technical field [0001] The invention belongs to the technical field of all-metal microstructure manufacturing, and particularly relates to a method for processing an all-metal channel type microstructure with a large thickness and a high aspect ratio. Background technique [0002] The all-metal channel microstructure has a wide range of applications in the field of terahertz vacuum electronics and microelectromechanical systems. With the development of electronic technology and micro-electromechanical systems, the size of all-metal channel microstructures has also changed correspondingly, from the nanometer and micrometer levels that can be achieved by traditional micro-nano processing to the size level of 100 microns. The size level of 100μm-1mm is the technical gap between the traditional mechanical processing field and the current microprocessing field. At present, the UV-LIGA technology based on SU-8 thick photoresist and the deep reactive ion etching technology have microstr...

AI Technical Summary

Problems solved by technology

[0004] (2) Using deep reactive ion etching technology to prepare structures with large thickness and high aspect ratio, the etching time is long, and the ion beam is not easy to control during etching, which is easy to cause damage to the microstructure

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