Field emission light source cathode, manufacturing method thereof and field emission light source device
A field emission and light source technology, which is applied in cold cathode manufacturing, electrode system manufacturing, lamp parts, etc., can solve the problems of improving and unfavorable field emission light source device luminous flux, limited light emitting area, etc.
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[0034] This embodiment also provides a method for preparing the cathode of a field emission light source, such as image 3 shown, including the following steps:
[0035] Step S1 : providing a substrate 110 , the substrate 110 includes a flexible substrate 112 and a conductive layer 114 disposed on the flexible substrate 112 , and then coating a resist on the conductive layer 114 of the substrate 110 to form a resist layer 140 .
[0036] In addition, in other implementation manners, the preparation method further includes a step of cleaning the substrate 110 . Specifically, the substrate 110 is ultrasonically cleaned sequentially using distilled water, acetone, absolute ethanol, distilled water, etc., and the cleaning time in each liquid is 15 minutes.
[0037] The thickness of the anti-etching layer 140 may be between 200-500 nm.
[0038] Step S2: Etching the resist layer 140 to form an array mask pattern penetrating to the conductive layer 114 .
[0039] In this embodiment...
Embodiment 1
[0050] The material of the substrate is as follows: flexible substrate: polyethylene terephthalate; conductive layer: ITO, thermal expansion coefficient 60*10 -6 m / K.
[0051] (1) Use distilled water, acetone, absolute ethanol and distilled water to ultrasonically clean the substrate in sequence, and the time for each ultrasonic cleaning is 15 minutes.
[0052] (2) Coat the X-ray resist PMMA with a thickness of 200 nm on the ITO conductive layer by spin coating to form an anti-etching layer.
[0053] (3) Expose the mask pattern with a diameter of 50nm and a period of 10μm on the surface coated with resist PMMA through a mask plate, using X-rays with a wavelength of 1nm; place the exposed substrate in a drying oven , and the temperature was raised to 120°C at a rate of 5°C / min, kept for 5min, and then cooled to room temperature naturally. Then, ammonium hydroxide and butyl acetate are used to develop and harden the film to obtain the desired array mask pattern.
[0054] (4) ...
Embodiment 2
[0059] The material of the substrate is as follows: flexible substrate: polyimide; conductive layer: ITO, thermal expansion coefficient 56×10 -6 m / K.
[0060] (1) Use distilled water, acetone, absolute ethanol and distilled water to ultrasonically clean the substrate in sequence, and the time for each ultrasonic cleaning is 15 minutes.
[0061] (2) Coating a UV resist with a thickness of 500 nm on the ITO conductive layer by spin coating method.
[0062] (3) On the surface coated with the resist through the mask plate, an array mask pattern arranged in a rectangle with a diameter of 100 nm and a period of 5 μm is etched by ultraviolet photolithography.
[0063] (4) A bonded titanium layer with a height of 0.5 μm is grown on the pattern of the substrate by spin coating, wherein the thermal expansion coefficient of titanium is 8.4×10 -6 m / K, the specific parameters of the spin coating method are: in the glue coater, the substrate rotation speed is 50rpm, the titanium slurry is...
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