Preparation method for cerium-doped barium strontium titanate (BST) thin film

A strontium barium titanate thin film and cerium doping technology, applied in the field of functional materials, can solve the problems of lack of sol, precipitation, deterioration of BST thin film structure and dielectric properties, etc., and achieve low leakage current density and low dielectric loss. Effect

Inactive Publication Date: 2014-06-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Strong acid cerium salt is insoluble in acetic acid but easily soluble in water. In the preparation process of cerium-doped BST sol, deionized water needs to be added to the acetic acid solvent as a co-solvent to be widely used. However, the cerium salt and butyl titanate Hydrolysis necessarily precipitates the sol containing hydroxides of cerium and titanium
Although a sol can be obtained when doped at a low concentration, it is only because a small amount of deionized water corresponds to a relatively small amount of precipitation, which is almost slightly soluble in acetic acid and is not easy to detect. crystallization due to the reduction of , so that the gel contains precipitates, which seriously deteriorates the structure and dielectric properties of the BST film
When high-concentration cerium is doped, a large amount of deionized water needs to be added as a co-solvent, and a large amount of precipitation occurs due to strong hydrolysis, resulting in a suspension and no sol.

Method used

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  • Preparation method for cerium-doped barium strontium titanate (BST) thin film
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  • Preparation method for cerium-doped barium strontium titanate (BST) thin film

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1: take cerium acetate as dopant to prepare 6 layers of Ba with cerium doping concentration of 1% 0.6 Sr 0.4 TiO 3 film

[0031] Step 1: Weigh barium acetate, strontium acetate and butyl titanate 0.012, 0.008 and 0.02 moles respectively according to the atomic molar ratio of Ba, Sr and Ti 0.6:0.4:1; add barium acetate and strontium acetate to 250-300 ml A barium strontium precursor solution is formed in a beaker of hot glacial acetic acid; add cerium acetate with 1% Ti atomic moles, and stir for 25 to 30 minutes to form a barium strontium cerium precursor; then add 0.6% Ti atomic moles PVP and stir for 20 to 30 minutes Minutes later, a PVP barium strontium cerium precursor solution was formed.

[0032] Step 2: Add 80-100 ml of ethylene glycol methyl ether to the PVP barium strontium cerium precursor solution and stir for 15-20 minutes, then add butyl titanate, and stir for 25-30 minutes to form a cerium-doped BST precursor solution.

[0033] Step 3: Add 8...

Embodiment 2

[0040] Embodiment 2: Prepare 6 layers of Ba with a cerium doping concentration of 20% using cerium acetate as a dopant 0.6 Sr 0.4 TiO 3 film

[0041] The implementation steps are as follows:

[0042] It is basically the same as "Steps of Example 1", except that "1%" in Step 1, Step 3 and Step 5 is replaced with "20%".

[0043] Similarly, to prepare other doping concentrations such as "0%" cerium-doped Ba 0.6 Sr 0.4 TiO 3 thin film or pure Ba 0.6 Sr 0.4 TiO 3 Thin film, only need to delete "add 1% Ti atomic mole cerium acetate, stir for 25-30 minutes to form barium strontium cerium precursor solution" in step 1, and at the same time delete the relevant "cerium" and "cerium doping" in the step and "Cerium doping concentration is 1%" can be deleted.

[0044] Examples 1 and 2 show that both BST sols and thin films with cerium acetate as dopant and cerium doping concentration of 0%-20% can be successfully prepared.

Embodiment 3

[0045] Embodiment 3: take cerium carbonate as dopant to prepare 6 layers of Ba with cerium doping concentration of 1% 0.6 Sr 0.4 TiO 3 film

[0046] The implementation steps are as follows:

[0047] It is basically the same as "the steps of Example 1", except that the relevant "cerium acetate" in step 1 is replaced by "cerium carbonate".

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Abstract

The invention relates to a preparation method for a cerium-doped barium strontium titanate (BST) thin film, belonging to the technical field of a functional material. The preparation method comprises the following steps: by taking barium salt, strontium salt, cerate and tetrabutyl titanate, not stronger than acetic acid, as raw materials, firstly preparing a barium-strontium precursor liquid, then adding cerate to form a barium strontium titanate precursor liquid, then adding PVP (Polyvinyl Pyrrolidone) to form a PVP barium strontium titanate precursor liquid, then adding ethylene glycol monomethyl ether and tetrabutyl titanate to form a cerium-doped BST precursor liquid, and then adding acetylacetone and metering the volume with glacial acetic acid to form BST sol; and then repeatedly leveling, drying, pyrolyzing, pre-crystallizing and cooling by adopting the BST sol to form a multilayered amorphous BST thin film, and finally crystallizing to obtain the cerium-doped BST thin film. According to the preparation method, the hydrolysis problem existing when the BST thin film is prepared by doping of high-concentration cerium (the cerium doping concentration is not lower than 5% of the concentration of titanium ions) can be solved, the prepared cerium-doped BST thin film has lower leakage current density and dielectric loss, thus meeting the microwave application of the cerium-doped BST thin film.

Description

technical field [0001] The invention belongs to the technical field of functional materials, and relates to a preparation method of barium strontium titanate (BST) thin film, especially a preparation method of cerium-doped BST thin film. Background technique [0002] Because of its unique dielectric properties, BST has broad application prospects in the fields of ferroelectric memory, pyroelectric detectors, and microwave tuning devices such as phase shifters. The relationship shows high tuning performance and becomes an important candidate material for microwave tuning devices. [0003] Cole et al clearly pointed out in Document 1 (Journal of applied physics, 2001, 89, 6336-6340) that in order to realize the microwave application of BST films, BST films must have low dielectric loss, high tuning rate, moderately small Dielectric constant, low leakage current density, dense ABO 3 Excellent comprehensive dielectric properties and structural characteristics such as perovskit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/622H10N30/853
Inventor 廖家轩李嶷云张高俊黄家奇张未芳徐自强尉旭波汪澎
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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