Production process of gradient band gap CIGS solar cell light absorption layer by adopting anti-vacuum method

Abstract

The invention provides a production process of a gradient band gap CIGS solar cell light absorption layer by adopting an anti-vacuum method. Gallium and organic selenium source solutes are used as a crystal nucleus growing agent and dissolve in an III.VI-group ternary compound to obtain a pure phase. C, Si, Ge and Sn main groups, V, Cr, Fe positive ions, Ti transition metal and lanthanide series light rare earth element dopants or aluminum, sulfur and carbon participate in liquid-solid-phase coordination chemical reaction to form an indium-free gallium-free intermediate band material and the solar cell photon absorption layer with five different elemental constituents distributed in a gradient energy band mode. The production process comprises the steps of S1, preparing a precursor solution F1 with a conduction band base layer and a valence band top layer; S2, preparing a precursor solution F2 with an intermediate band layer; S3, preparing a precursor solution F3 for band gap adjustment, a precursor solution F4 with a band gap adjustment sub-layer and a precursor solution F5 for adjustment sub-layer supplementation; S4, cleaning a substrate; S5, performing coating to form the light absorption layer; S6 performing organic selenium source thermo-synthesis.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a production process for preparing a gradient band gap CIGS solar cell light absorption layer by a non-vacuum method. Background technique [0002] In order to alleviate the human energy crisis, the development of renewable resources such as solar energy must become the mainstream of energy. According to the production materials, the attenuation rate of silicon-based film batteries is high, and cadmium telluride film batteries are toxic elements, which are banned in many countries. The "solid dye" of dye-sensitized thin-film batteries also has severe photocorrosion of wide-bandgap semiconductors, and energy conversion of organic solar cells. Efficiency, poor stability and low strength, CIGS has the highest efficiency among various thin-film photovoltaic technologies, but the cost is only 1 / 4 of the crystalline silicon solar cells currently used in the market, with good stab...

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Problems solved by technology

However, the CIGS film produced by this process has poor flatness, and the mixed gallium particle solution is difficult to mix evenly, and contains impurities, which affect the conversion rate of the battery.

The second is that the particle deposition particles are loose, cracks and holes appear, which affect the photovoltaic effect of the PN junction and increase the probability of short circuit

[0005] In addition, currently in the preparation of copper indium gallium prefabricated solutions, anhydrous hydrazine is often used to remove impurities such as C, O, and C1, but anhydrous hydrazine (N 2 h 4 ) is a high-energy fuel commonly used in spaceships. It is not only expensive, but also extremely toxic, which is not conducive to the large-scale production of copper indium gallium selenide thin film batteries in factories.

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