A kind of epitaxial growth method of purple LED

Abstract

The invention provides an epitaxial growth method of a purple-light LED. The suitable wavelength range of the method is 365-420 nm, the growth difficulty of the purple-light LED can be greatly lowered, meanwhile, the radiation power of the purple-light LED can be increased and the reliability of purple-light LED devices is effectively improved. In the epitaxial growth method, an n-type AlGaN / GaN super lattice structure is adopted, potential-barrier-layer AlGaN and potential-well-layer GaN are doped alternately periodically, and therefore concentration of n-type carriers can be concentrated; the concentration of different layers change periodically, and periodic conductance changes enable currents to be diffused better; meanwhile, the conductance changing area is widened, so that the transmitting effect of an electric leakage channel with linear defects is weakened, forward voltage can be lowered, and ESD can be improved.

Description

technical field [0001] The invention belongs to the technical field of photoelectric device material preparation and structure design, and in particular relates to an epitaxial growth method of a violet LED. Background technique [0002] With the advancement of science and technology and the development of new energy sources, solid-state LED lighting will become the trend of lighting in the future world. Due to the advantages of energy saving, environmental protection, safety, long life, low consumption, and low heat, LEDs have been widely used in traffic lights, traffic lights, etc. Signal lights, landscape decorative lights, display screens, car tail lights, mobile phone backlights and other fields. At present, the LEDs on the market are mainly blue-green light, followed by red and yellow light. There are relatively few purple and ultraviolet LED products, mainly because purple LEDs are difficult to manufacture and have low luminous efficiency. With the development of LED...

AI Technical Summary

Problems solved by technology

[0003] At present, the epitaxial growth technology of purple light LED is not mature enough. On the one hand, it is restricted by the characteristics of the purple light growth material, and on the other hand, due to the influence of the energy band structure of the purple light LED, the luminous efficiency of the current purple light LED chip is low, the preparation cost is high, and the difficulty is great. , low yield, etc.

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