Polishing liquid and its preparation method and application

A polishing liquid and brightener technology, applied in the field of electrochemical polishing, can solve the problems of poor surface brightness, high roughness, and increased difficulty in waste liquid treatment, and achieve the effect of loose process conditions, good polishing effect, and easy follow-up treatment

Active Publication Date: 2016-07-06
SUZHOU NEW MATERIAL INST +2
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) The existing polishing liquid is mainly prepared for contact polishing, and the surface brightness of the sample polished by the polishing liquid is poor and the roughness is high;
[0005] (2) The existing polishing liquid mainly uses chromic acid as a corrosive agent, so that the waste liquid contains heavy metal ions such as chromium root, which increases the difficulty of the subsequent treatment of the waste liquid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing liquid and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0032] Such as figure 1 Shown, the present invention also provides a kind of preparation method for above-mentioned polishing liquid, and this preparation method comprises the steps:

[0033] S1. Mix the corrosive agent and the viscosity regulator evenly to form a mixed solution.

[0034] Preferably, when uniformly mixing the corrosive agent and the viscosity modifier, one component of the viscosity modifier is selected to be uniformly mixed with the corrosive agent, and the component is glycerol.

[0035] S2. Dissolve the corrosion inhibitor and the brightener in deionized water in sequence, and stir evenly until completely dissolved.

[0036] Preferably, step S2 further includes: dissolving another component of the viscosity modifier that is not easily miscible with acid, the corrosion inhibitor, and the brightener in deionized water in sequence, and stirring evenly until completely dissolved. Another component of the viscosity modifier is polyethylene glycol.

[0037] In...

Embodiment 1

[0046] Mix 30kg of sulfuric acid, 50kg of phosphoric acid, and 1.6kg of glycerin evenly, then dissolve 0.8kg of polyethylene glycol, 0.3kg of thiourea, 0.2kg of ethylenediaminetetraacetic acid, and 0.2kg of sodium benzoate in 25L of 70℃ deionized water. Stir evenly for a period of time until the solution is completely dissolved. Slowly add this solution into the mixed solution of sulfuric acid, phosphoric acid and glycerin while stirring, and circulate at 50°C for 24 hours.

[0047] The above-mentioned prepared solution was aged at 40° C. by passing an electric current. The anode current density is controlled at 3000A / m 2 , aged for 24 hours.

Embodiment 2

[0049] Mix 40kg of sulfuric acid, 60kg of phosphoric acid, and 1.8kg of glycerin evenly, then dissolve 1kg of polyethylene glycol, 0.4kg of thiourea, 0.3kg of ethylenediaminetetraacetic acid, and 0.1kg of sodium benzoate into a 30L 70°C dehydrator in order. ionized water. Stir evenly for a period of time until the solution is completely dissolved. Slowly add this solution into the mixed solution of sulfuric acid, phosphoric acid and glycerin while stirring, and circulate at 50°C for 24 hours.

[0050] The above-mentioned prepared solution was aged at 40° C. by passing an electric current. The anode current density is controlled at 2000A / m 2 , aged for 48 hours.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a polishing solution as well as a preparation method and application of the polishing solution, wherein the polishing solution comprises a corrosive agent, a viscosity regulator, a corrosion inhibitor, a brightening agent and deionized water. The corrosive agent comprises sulfuric acid and phosphoric acid; the viscosity regulator is one or more selected from the following substances: polyethylene glycol, gelatin, polyhydric alcohol, glycerol and dextrin; the corrosion inhibitor is one or more selected from the following substances: rodine, thiourea, diamylamine, methylphenylthiourea and ethylenediamine tetraacetic acid; the brightening agent is one or more selected from the following substances: salicylic acid, sulfonic acid, sodium benzoate, benzenediol and fluorine-contained quaternary ammonium. The polishing solution disclosed by the invention is free of heavy metal components, easy to realize subsequent treatment, relatively good in polishing stability and capable of obtaining a relatively good polishing effect within a relatively wide concentration change range. In addition, the preparation method of the polishing solution disclosed by the invention is low in process condition requirement and capable of obtaining the relatively good polishing effect within a wide current density range.

Description

technical field [0001] The invention relates to the technical field of electrochemical polishing of substrates or base bands in the electronic industry technology, in particular to a preparation method of electrochemical polishing liquid and its application in the preparation of high-temperature superconducting base bands. Background technique [0002] In the fields of semiconductor lighting, optoelectronics and superconductivity, it is necessary to use epitaxial growth technology to prepare materials with special structures. Epitaxial growth has special requirements on the structure of the substrate material, so the substrate material that meets the requirements must be prepared before epitaxial growth. In general, single crystal materials can be used as substrates if the required part size is small. However, if the material to be prepared is a continuous winding strip, the preparation process limited to single crystal materials is difficult to meet the requirements. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/04C09G1/18
Inventor 程好高永超杨淑平庄维伟张国栋蔡渊
Owner SUZHOU NEW MATERIAL INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products