Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching liquid composition for copper/molybdenum film or copper/molybdenum alloy film

A technology of composition and molybdenum alloy, which is applied in the field of etching solution composition, can solve problems such as product failure, and achieve the effects of reducing manufacturing costs, reducing failure rate, and slowing down etching speed

Active Publication Date: 2014-07-16
ENF TECH
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if the glass substrate is over-etched, the etching stain left on the substrate will become the main cause of product failure.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching liquid composition for copper/molybdenum film or copper/molybdenum alloy film
  • Etching liquid composition for copper/molybdenum film or copper/molybdenum alloy film
  • Etching liquid composition for copper/molybdenum film or copper/molybdenum alloy film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 14 and comparative example 1

[0035] The contents of the components listed in Table 1 below were mixed to prepare the etching solution compositions of Examples 1 to 14 and Comparative Example 1 of the present invention. The water content is the remaining amount of 100% of the total weight in the composition.

[0036] Table 1

[0037]

[0038] ATZ: 5-aminotetrazole (5-aminotetrazole),

[0039] IDA: iminodiacetic acid (iminodiacetic acid),

[0040] BTZ: benzothiazole (benzothiazole),

[0041] PEG: polyethylene glycol (polyethylene glycol)

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to an etching liquid composition for a copper / molybdenum or a copper / molybdenum alloy film. As for the overall weight of the composition which is of 100% weight, the etching liquid composition contains 5-40% weight of hydrogen peroxide, 0.1-5% weight of an etching inhibitor, 0.1-5% weight of a chelating agent, 0.1-5% weight of an etching additive, 0.01-2% weight of fluoride, 0.01-2% weight of a hydrogen peroxide stabilizer, and 0.1-5% weight of a bromide ion compound, the balance being water. The bromide ion compound is a bromine inorganic acid salt, a nitride bromide, a sulfide bromide, a bromine fluoride, a bromine chloride or a mixture thereof. When etching is repeatedly performed and thus the content of metal ions in the etching liquid is high, with adoption of the etching liquid composite, the etching characteristics such as the etching taper angle, etching deviation and etching straightness are maintained, and the composition can also be used as a lower film and applied to TFT-LCD display electrode manufacture.

Description

technical field [0001] The invention relates to an etching liquid composition for a copper-molybdenum film or a copper-molybdenum alloy film, in particular to an etching liquid composition for a copper / molybdenum film or a copper / molybdenum alloy film used for display electrodes such as TFT-LCD and OLED. Background technique [0002] Microcircuits such as semiconductor devices, TFT-LCDs, and OLEDs are coated evenly on conductive metal films such as aluminum, aluminum alloys, copper, and copper alloys or insulating films such as silicon dioxide films and silicon nitride films formed on substrates. The photoresist is then imaged after light irradiation through the patterned film to make the required pattern photoresist image, and the pattern is displayed on the metal film or insulating film under the photoresist by dry etching or wet etching Finally, a series of photolithography processes such as stripping and removing unnecessary photoresist are completed. [0003] The coppe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/04C23F1/18C23F1/26
CPCC23F1/18
Inventor 申孝燮李恩庆金世训
Owner ENF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products