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Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells

A technology of organic thin films and photovoltaic cells, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing device carrier transmission efficiency, rough surface morphology of metal cathodes, blurred boundaries of metal cathodes, etc., to achieve Eliminate the diffraction effect of the metal cathode boundary, increase the carrier transport density, and modify the surface morphology

Inactive Publication Date: 2014-07-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the wrapping effect of the organic polymer in the nano conductive ink on the metal nanoparticles, the metal cathode prepared by spraying has high square resistance and low conductivity; the tiny gap between the mask plate and the substrate used in the process of preparing the metal cathode by spraying , will cause diffraction effect at the boundary of the metal cathode, resulting in fuzzy boundaries of the metal cathode, making it extremely difficult to further reduce the size of the device; at the same time, the surface morphology of the metal cathode sintered at high temperature is rough, and the organic film prepared on the metal cathode cannot be well formed with it. contact, thereby reducing the carrier transport efficiency of the device

Method used

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  • Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1 (control group)

[0034] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; spin-coat ZnO on the surface of the metal cathode (5000rpm, 40s, 15nm), And the formed film was baked (200°C, 60min); on the cathode buffer layer, the PTB7:PCBM (1:20, 20mg / ml) photoactive layer was prepared by spin coating (1200rpm, 50s); on the photoactive layer Evaporated MoO on the surface 3 (10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured open circuit voltage of the device (V OC )=0.655V, short-circuit current (J SC )=14.5mA / cm 2 , fill factor (FF) = 0.515, photoelectric conversion efficiency (PCE) = 4.89%.

Embodiment 2

[0036] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; use an acidic solvent (isopropanol 3%, HCl solution 97% with a mass fraction of 37%, the liquid level of the acidic solvent is 10cm lower than the metal cathode layer of the substrate) annealing (5min); spin coating ZnO (5000rpm, 40s, 15nm) on the surface of the metal cathode, and the formed The thin film was baked (200°C, 60min); the photoactive layer of PTB7:PCBM (1:20, 20mg / ml) was prepared by spin coating on the cathode buffer layer (1200rpm, 50s); MoO was evaporated on the surface of the photoactive layer 3(10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured device V OC =0.678V, J SC =16.9mA / cm 2 , FF=0.527, PCE=6.03%.

Embodiment 3

[0038] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; use an acidic solvent (isopropanol 3%, HCl solution 97% with a mass fraction of 37%, the liquid level of the acidic solvent is 10cm lower than the metal cathode layer of the substrate) annealing (10min); spin coating ZnO (5000rpm, 40s, 15nm) on the surface of the metal cathode, and the formed The thin film was baked (200°C, 60min); the photoactive layer of PTB7:PCBM (1:20, 20mg / ml) was prepared by spin coating on the cathode buffer layer (1200rpm, 50s); MoO was evaporated on the surface of the photoactive layer 3 (10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer, and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured device V OC =0.667V,J SC =17.3mA / cm 2 , FF=0.567, PCE=6.54%.

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Abstract

The invention discloses a method for manufacturing high-conductivity organic thin-film solar photovoltaic cells and belongs to the field of organic semiconductor thin-film solar photovoltaic cells. In order to solve the technical problems that in the prior art, metal cathodes manufactured through spraying are high in sheet resistance and low in conductivity, and the carrier transport efficiency of solar cells is low. According to the method, annealing is performed on metal cathodes manufactured through nanometer conductive ink in a situ-sintering and spraying mode through acid solvent, the type of the acid solvent and the annealing time are optimized, coating of conducive nanoparticles with polyesters in conductive ink can be effectively adjusted, the conductivity of the metal cathodes is improved, the boundary diffraction effect of the metal cathodes is eliminated, the carrier transport efficiency is promoted, and thus the photoelectric conversion efficiency of devices is effectively improved.

Description

technical field [0001] The invention belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin-film solar photovoltaic cells, and in particular relates to a preparation method of high-conductivity organic thin-film solar photovoltaic cells. Background technique [0002] With the rapid increase of global energy demand, the effective use of renewable energy has become an urgent problem to be solved. At present, most of the energy used in the world comes from the exploitation of fossil fuels, which mainly include oil, natural gas and coal. However, the reserves of fossil resources are limited. In comparison, the solar energy irradiated by the sun in the Milky Way to the earth has the advantages of inexhaustibility, inexhaustibility, and no pollution. It is a hotspot that developed countries are competing to develop and utilize. At present, according to the different properties of the materials that make up the photoactive layer of solar photo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48
CPCH10K71/60Y02E10/549Y02P70/50
Inventor 于军胜李曙光郑毅帆郑丁
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA