Method for manufacturing high-conductivity organic thin-film solar photovoltaic cells
A technology of organic thin films and photovoltaic cells, applied in photovoltaic power generation, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing device carrier transmission efficiency, rough surface morphology of metal cathodes, blurred boundaries of metal cathodes, etc., to achieve Eliminate the diffraction effect of the metal cathode boundary, increase the carrier transport density, and modify the surface morphology
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] Embodiment 1 (control group)
[0034] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; spin-coat ZnO on the surface of the metal cathode (5000rpm, 40s, 15nm), And the formed film was baked (200°C, 60min); on the cathode buffer layer, the PTB7:PCBM (1:20, 20mg / ml) photoactive layer was prepared by spin coating (1200rpm, 50s); on the photoactive layer Evaporated MoO on the surface 3 (10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured open circuit voltage of the device (V OC )=0.655V, short-circuit current (J SC )=14.5mA / cm 2 , fill factor (FF) = 0.515, photoelectric conversion efficiency (PCE) = 4.89%.
Embodiment 2
[0036] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; use an acidic solvent (isopropanol 3%, HCl solution 97% with a mass fraction of 37%, the liquid level of the acidic solvent is 10cm lower than the metal cathode layer of the substrate) annealing (5min); spin coating ZnO (5000rpm, 40s, 15nm) on the surface of the metal cathode, and the formed The thin film was baked (200°C, 60min); the photoactive layer of PTB7:PCBM (1:20, 20mg / ml) was prepared by spin coating on the cathode buffer layer (1200rpm, 50s); MoO was evaporated on the surface of the photoactive layer 3(10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured device V OC =0.678V, J SC =16.9mA / cm 2 , FF=0.527, PCE=6.03%.
Embodiment 3
[0038] Clean the substrate with a surface roughness of less than 1nm, and dry it with nitrogen after cleaning; in-situ sintering (150°C) on a hot table to prepare a metal cathode; use an acidic solvent (isopropanol 3%, HCl solution 97% with a mass fraction of 37%, the liquid level of the acidic solvent is 10cm lower than the metal cathode layer of the substrate) annealing (10min); spin coating ZnO (5000rpm, 40s, 15nm) on the surface of the metal cathode, and the formed The thin film was baked (200°C, 60min); the photoactive layer of PTB7:PCBM (1:20, 20mg / ml) was prepared by spin coating on the cathode buffer layer (1200rpm, 50s); MoO was evaporated on the surface of the photoactive layer 3 (10nm) anode buffer layer; spray PEDOT:PSS anode (100nm) on the anode buffer layer, and bake (130°C, 10min). Under standard test conditions: AM1.5, 100mW / cm 2 , the measured device V OC =0.667V,J SC =17.3mA / cm 2 , FF=0.567, PCE=6.54%.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| concentration | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 