A kind of tappet and its preparation method
A kind of equipment, magnetron sputtering technology, applied in the field of tappet and its preparation, can solve the problems of material hardness and infiltration layer unevenness, impact resistance weakening, temperature unevenness, etc., to increase fatigue resistance and reduce residual Stress, enhance the effect of interdiffusion
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[0024] The embodiment of the present invention discloses a method for preparing a tappet, comprising the following steps:
[0025] a) placing the tappet substrate in a magnetron sputtering device, and preheating the tappet substrate after vacuuming;
[0026] b) activating the tappet obtained in step a);
[0027] c) Sputtering the tappet obtained in step b) by using a TiC target and a SiC target under a nitrogen atmosphere;
[0028] d) Annealing the tappet obtained in step c).
[0029] The preparation method of the tappet provided by the present invention is to use magnetron sputtering technology to treat the surface of the tappet, thereby obtaining a layer of composite layer on the surface of the tappet, so that the tappet has higher hardness, wear resistance and contact resistance fatigue performance.
[0030] According to the present invention, firstly, the tappet substrate is placed in the magnetron sputtering equipment, and the magnetron sputtering equipment is evacuate...
Embodiment 1
[0040] Step 1) Put the tappet substrate after degreasing and derusting on the special tooling rack in the magnetron sputtering equipment; vacuumize the magnetron sputtering equipment to a vacuum degree of 2×10 -3 Pa, then preheat the substrate to 300-500°C;
[0041] Step 2) Inject argon gas into the magnetron sputtering equipment. When the pressure in the magnetron sputtering vacuum chamber reaches 0.1-10Pa, the radio frequency current is 100-200A, and use argon plasma to treat the surface of the tappet obtained in step 1). bombardment activation;
[0042] Step 3) Introduce nitrogen gas into the vacuum chamber of the magnetron sputtering equipment, the partial pressure of nitrogen gas accounts for 50%, the deposition time is 80min, the target center distance is 60mm, the power of the magnetron sputtering target for the TiC target is 600W, and the magnetron sputtering target for the SiC target is 600W. The power of the sputtering target is 400W, and the TiSiCN anti-wear lubric...
Embodiment 2
[0046] Step 1) Put the degreased and derusted tappet substrate on the special tooling rack in the magnetron sputtering equipment; vacuum the magnetron sputtering equipment to a vacuum degree of 2×10 -3 Pa, then preheat the substrate to 300-500°C;
[0047] Step 2) Introduce argon gas into the magnetron sputtering equipment, when the pressure in the magnetron sputtering vacuum chamber reaches 0.1-10Pa, the radio frequency current is 100-200A, use argon plasma to treat the tappet substrate obtained in step 1) Surface activation by bombardment;
[0048] Step 3) Nitrogen gas is introduced into the vacuum chamber of the magnetron sputtering equipment, the partial pressure of nitrogen gas accounts for 55%, the deposition time is 90min, the target center distance is 80mm, the power of the magnetron sputtering target of the TiC target is 800W, and the magnetron sputtering target of the SiC target is 800W. The power of the sputtering target is 400W, and the TiSiCN anti-wear lubricating...
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