Preparation method of boron-nitrogen co-doped nano-based oriented diamond film

Abstract

The invention discloses a preparation method of a boron-nitrogen co-doped nano-based an oriented diamond film. The preparation method comprises the following steps: by taking a heater CVD (Chemical Vapor Deposition) device as deposition equipment, adding boron-nitrogen-containing compounds into a conventional hydrogen and acetone reaction system to form a co-doped system; adjusting the reaction technical parameters; preparing the film where diamond particle particles and oriented diamond particles co-exist. The method is simple in process flow. The obtained film has the characteristics that the film has the surface which is leveler than a randomly oriented micron order diamond film, high and uniform wear resistance, easiness in polishing, low internal stress, high adhesive force of the film base and the like.

Description

technical field [0001] The invention relates to a preparation method in the technical field of thin films, in particular to a preparation method for a boron-nitrogen co-doped nano-based oriented diamond film. Background technique [0002] Chemical vapor deposition (referred to as CVD method, Chemical Vapor Deposition) diamond film growth mode is dominated by Volmev-weber island growth, making its structure usually a columnar growth structure. According to the selective growth theory proposed by Van der Drift, the formation of thin film is the result of competitive growth among diamond grains of different crystals and different orientations. The crystal surface on the film surface is related to the growth rate of the crystal plane. revealed. Under the usual chemical vapor deposition conditions, the growth rate of the {111} plane is the slowest, so most of the obtained diamond films are diamond films with the {111} plane exposed. The diamond exposed on the {111} plane usuall...

AI Technical Summary

Problems solved by technology

Compared with micron-sized diamond films, nano-diamond has a better surface finish, but due to its more secondary nucleation, the competition between internal nuclei is more intense during the growth process, resulting in greater internal stress and weaker film-base adhesion. Poor, and its wear resistance is relatively poor for micron-sized diamonds with large particles

[0003] After searching the literature of the prior art, it was found that Chinese patent 03151295.X "Preparation method of diamond coating for tools with complex shapes on cemented carbide substrates" discloses a deposition method of nano- and micro-composite diamond films. A layer of micron-scale diamond film, and the

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