Trans-organic thin film solar cell modified by polarity buffer layer
A technology of solar cells and organic thin films, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large series resistance of devices, limiting short-circuit current density, and high carrier trap density, etc., to increase short-circuit current density, The effect of promoting vertical phase separation and reducing trap density
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Embodiment 1
[0020] Embodiment 1 (control group):
[0021] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare P3HT:PCBM (1:20, 20mg / ml) photoactive layer (1000rpm, 25s, 220nm) on the cathode buffer layer by spin coating, and bake (140°C, 5min); spin-coat PEDOT:PSS solution on the surface of the photoactive layer to prepare an anode buffer layer (3000rpm, 60s, 30nm); anneal the substrate by heating and annealing on a constant temperature hot table (150°C ,5min); Evaporate metal anode Ag (100nm) on the anode buffer layer. Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was measured (V OC )=0.56V, short-circuit current (J SC )=8.2mA / cm 2 , fill factor (FF)=0...
Embodiment 2
[0023] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare P3HT:PCBM (1:20, 20mg / ml) photoactive layer (1000rpm, 25s, 220nm) on the cathode buffer layer by spin coating, and bake (140°C, 5min); spin-coat PEDOT:PSS solution on the surface of the photoactive layer to prepare an anode buffer layer (3000rpm, 60s, 30nm); spin-coat a polar buffer layer on the anode buffer layer (N, N-dimethylformamide 93%, PEODT:PSS7%, 5000rpm, 60s, 5nm); the substrate is annealed by heating and annealing on a constant temperature hot stage (150°C, 5min); metal is evaporated on the polar buffer layer Anode Ag (100nm). Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was...
Embodiment 3
[0025] Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and blow dry with nitrogen after cleaning; spin-coat ZnO (5000rpm, 40s, 15nm) on the surface of transparent conductive cathode ITO to prepare cathode buffer layer, and bake the formed film (200°C, 60min); prepare P3HT:PCBM (1:20, 20mg / ml) photoactive layer (1000rpm, 25s, 220nm) on the cathode buffer layer by spin coating, and bake (140°C, 5min); spin-coat PEDOT:PSS solution on the surface of the photoactive layer to prepare an anode buffer layer (3000rpm, 60s, 30nm); spin-coat a polar buffer layer on the anode buffer layer (N, N-dimethylformamide 95%, PEODT:PSS5%, 5000rpm, 60s, 5nm); the substrate is annealed by heating and annealing on a constant temperature hot table (150°C, 5min); metal is evaporated on the polar buffer layer Anode Ag (100nm). Under standard test conditions: AM1.5, 100mW / cm 2 , the open circuit voltage of the device was...
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