GaN-based light-emitting diode and preparation method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unfavorable productivity, lattice mismatch, time effects, etc., to improve EfficiencyDroop, reduce heating and cooling time, shorten The effect of program time

Active Publication Date: 2014-08-20
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

However, the luminous efficiency of LED is relatively low at present. From the perspective of epitaxial structure, further improving the electron hole injection efficiency and recombination efficiency in the active layer of LED needs to improve the internal quantum efficiency (IQE: Internal Quantum Efficiency)
[0003] The traditional multi-quantum well active layer is composed of GaN quantum barriers and InGaN quantum well structures. However, due to the lattice mismatch between GaN and InGaN materials, the polarization effect occurs, causing the conduction band and the valence band to be discontinuo

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  • GaN-based light-emitting diode and preparation method thereof
  • GaN-based light-emitting diode and preparation method thereof
  • GaN-based light-emitting diode and preparation method thereof

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Embodiment Construction

[0019] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0020] Please refer to the attached figure 1 , A gallium nitride-based light emitting diode, from bottom to top generally includes: a substrate 1, a buffer layer 2, an N-type layer 3, a stress relief layer 4, a multiple quantum well active region 5 and a P-type layer 6. The manufacturing method of the aforementioned light emitting diode includes the steps: 1) growing a buffer layer 2 on the substrate 1; 2) growing an N-type layer 3 on the buffer layer 2; 3) growing a stress relief layer 4 on the N-type layer 3; 4) A multi-quantum well active region 5 is grown on the stress relief layer 4; 6) a P-type layer 6 is grown on the multi-quantum well active region 5.

[0021] Specifically, the material of the substrate 1 can be alumina single crystal (Sapphire), SiC (6H-SiC or 4H-SiC), Si, GaAs, GaN substrate or a single crystal oxide with a lattice cons...

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Abstract

The invention discloses a GaN-based light-emitting diode which comprises a substrate, a buffer layer, an N-type layer, a multiple quantum well active layer and a P-type layer, wherein the multiple quantum well active layer consists of InGaN quantum wells and InAlN quantum barriers. In the GaN-based light-emitting diode, InAlN materials in lattice matching with InGaN quantum well materials serve as the quantum barriers, so that a QCSE (Quantum-Confined Stark Effect) is improved, Efficiency Droop of a device is improved, the light-emitting efficiency of the device is improved, and IQE (Internal Quantum Efficiency) of an LED (Light-Emitting Diode) assembly is improved.

Description

Technical field [0001] The invention relates to the field of preparation of semiconductor optoelectronic devices, in particular to a gallium nitride-based light-emitting diode and a preparation method thereof. Background technique [0002] The advantages of light-emitting diodes (LEDs) in terms of energy saving, environmental protection and long life have attracted widespread attention. Especially LEDs based on gallium nitride materials, because their wavelength range theoretically covers the entire visible light band and ultraviolet band, it has become the mainstream direction of current LED development. GaN material blue LED technology has made progress in both research and commercial production applications, and its application fields are broad. However, the current LED luminous efficiency is relatively low. From the perspective of the epitaxial structure, further improving the electron hole injection efficiency and recombination efficiency in the LED active layer requires im...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32
Inventor 蓝永凌张家宏卓昌正林兓兓谢翔麟谢祥彬徐志波
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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