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Corrosive liquid for tellurium-cadmium-mercury material and preparation method of corrosive liquid

A preparation method and mercury cadmium telluride technology are applied in the field of manufacturing technology of mercury cadmium telluride detector chips, which can solve the problems of high purity requirements of hydrobromic acid and strict requirements on the temperature range of corrosive environment, and achieve a large viscosity coefficient and high reliability. The effect of controlling corrosion and reducing corrosion rate

Inactive Publication Date: 2014-09-10
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of corrosion solution for mercury cadmium telluride material, which solves the problems in the prior art that the purity requirement of hydrobromic acid is too high and the temperature range of the corrosion environment is too strict, and realizes the corrosion solution at room temperature. Controlled Corrosion of HgCdTe Materials

Method used

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  • Corrosive liquid for tellurium-cadmium-mercury material and preparation method of corrosive liquid
  • Corrosive liquid for tellurium-cadmium-mercury material and preparation method of corrosive liquid
  • Corrosive liquid for tellurium-cadmium-mercury material and preparation method of corrosive liquid

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Experimental program
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Effect test

Embodiment 1

[0014] 1. Immerse the mercury cadmium telluride material to be corroded successively in MOS-grade trichlorethylene, ether, acetone, and alcohol for 10 minutes, and dry it with nitrogen after cleaning;

[0015] 2. Set the speed of the KW-4 homogenizer to 2000r / min, and the rotation time to 30s. Spin-coat a layer of photoresist on the surface of the HgCdTe material, and then bake it in an oven at 80 degrees Celsius for 30 minutes;

[0016] 3. Select a tabletop photolithography plate, use MJB3 photolithography machine to lithography, expose for 7s, develop for 10s, fix with deionized water, and bake in an oven at 80 degrees Celsius for 30 minutes;

[0017] 4. Prepare HgCdTe material corrosion solution, the volume ratio is bromine: hydrobromic acid: ethylene glycol = 1:5:50. First pour the hydrobromic acid solution into the ethylene glycol solution in proportion, let it stand for 10 minutes, then pour the bromine solution into the mixed solution of hydrobromic acid and ethylene gl...

Embodiment 2

[0020] 1. Immerse the mercury cadmium telluride material to be corroded successively in MOS-grade trichlorethylene, ether, acetone, and alcohol for 10 minutes, and dry it with nitrogen after cleaning;

[0021] 2. Set the speed of the KW-4 homogenizer to 2000r / min, and the rotation time to 30s. Spin-coat a layer of photoresist on the surface of the HgCdTe material, and then bake it in an oven at 80 degrees Celsius for 30 minutes;

[0022] 3. Select a tabletop photolithography plate, use MJB3 photolithography machine to lithography, expose for 7s, develop for 10s, fix with deionized water, and bake in an oven at 80 degrees Celsius for 30 minutes;

[0023] 4. Prepare HgCdTe material corrosion solution, the volume ratio is bromine: hydrobromic acid: ethylene glycol = 1:20:30. First pour the hydrobromic acid solution into the ethylene glycol solution in proportion, let it stand for 10 minutes, then pour the bromine solution into the mixed solution of hydrobromic acid and ethylene g...

Embodiment 3

[0026] 1. Immerse the mercury cadmium telluride material to be corroded successively in MOS-grade trichlorethylene, ether, acetone, and alcohol for 10 minutes, and dry it with nitrogen after cleaning;

[0027] 2. Set the speed of the KW-4 homogenizer to 2000r / min, and the rotation time to 30s. Spin-coat a layer of photoresist on the surface of the HgCdTe material, and then bake it in an oven at 80 degrees Celsius for 30 minutes;

[0028] 3. Select a tabletop photolithography plate, use MJB3 photolithography machine to lithography, expose for 7s, develop for 10s, fix with deionized water, and bake in an oven at 80 degrees Celsius for 30 minutes;

[0029] 4. Prepare HgCdTe material corrosion solution, the volume ratio is bromine: hydrobromic acid: ethylene glycol = 1:50:20. First pour the hydrobromic acid solution into the ethylene glycol solution in proportion, let it stand for 10 minutes, then pour the bromine solution into the mixed solution of hydrobromic acid and ethylene g...

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Abstract

The invention discloses a corrosive liquid for a tellurium-cadmium-mercury material and a preparation method of the corrosive liquid. The corrosive liquid is prepared from three solutions, namely, a bromine solution, a hydrobromic acid solution and an ethylene glycol solution, wherein the corrosive liquid is prepared by firstly, pouring the hydrobromic acid solution into the ethylene glycol solution according to a ratio, standing for 5-10 minutes, further pouring the bromine solution into a mixture solution of the hydrobromic acid solution and the ethylene glycol solution, thereby obtaining the corrosive liquid for the tellurium-cadmium-mercury material after the color is settled. The corrosive liquid can be not only used for surface corrosion of the tellurium-cadmium-mercury material, but also used for table surface corrosion, the problems that in the prior art, the purity of hydrobromic acid is over highly required and the temperature range of a corrosive environment is required too strictly are solved, and controllable corrosion on the tellurium-cadmium-mercury material at the room temperature is achieved.

Description

technical field [0001] The invention relates to a manufacturing process technology for a mercury cadmium telluride detector chip, in particular to a corrosion solution for a mercury cadmium telluride material and a preparation method. The etching solution can be used not only for surface etching of mercury cadmium telluride materials but also for mesa etching. Background technique [0002] Mercury cadmium telluride detectors are imaging sensors used to obtain infrared information of objects and simultaneously process information. It is widely used in many fields such as aviation, aerospace, agriculture and ocean. One of the cores of the HgCdTe detector manufacturing process is the HgCdTe chip manufacturing process, including coating, wet etching, dry etching, polishing, cutting, photolithography, etc., among which the surface corrosion and mesa corrosion of HgCdTe materials It is a common wet etching process, and the commonly used corrosion solutions for mercury cadmium tel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
Inventor 樊华廖清君刘丹杨勇斌黄悦周松敏孙常鸿解晓辉胡晓宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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