Polysilicon resistor structure and method of forming the same

Abstract

The invention relates to a polyresistor structure and a forming method thereof. The polyresistor structure comprises a substrate, a polyresistor, a metal electrode, and a metal heat radiation structure; the polyresistor with the resistor negative temperature coefficient is arranged at the substrate; the metal electrode is electrically connected with the two ends of the polyresistor; and the metal heat radiation structure with the resistor positive temperature coefficient is arranged at the surface of the middle portion of the polyresistor. The metal heat radiation structure is isolated from the metal electrode, so that the total resistance changing amplitude of the polyresistor structure is reduced when the temperature changes. Because the heat generated by the polyresistor can be dissipated by the metal heat radiation structure, the temperature changing amplitude of the polyresistor structure during working can be reduced beneficially, thereby reducing the changing value of the total resistance value of the polyresistor structure with the temperature can be reduced. Moreover, on the basis of the metal interconnection structure with the resistor positive temperature coefficient, the changing value of the total resistance value of the polyresistor structure with the temperature can also be reduced, thereby improving the temperature stability of the resistance value of the polyresistor structure beneficially.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a polysilicon resistance structure and a forming method thereof. Background technique [0002] In semiconductor integrated circuits (ICs), polysilicon resistors are a very commonly used electronic component. According to different doping ions and doping levels, P+, N+, P- and N- polysilicon resistors can be manufactured. For the formation process of existing polysilicon resistors, please refer to Figure 1 to Figure 6 ,include: [0003] Please refer to figure 1 , providing a semiconductor substrate 10, and forming an insulating layer 11 on the semiconductor substrate 10; [0004] Please refer to figure 2 , forming a polysilicon film 20 on the surface of the insulating layer 11, and performing ion doping on the polysilicon film 20; [0005] Please refer to image 3 , etching the polysilicon film 20 to form strip-shaped polysilicon resistors 21; [0006] Please r...

AI Technical Summary

Problems solved by technology

[0010] However, with the increase in the integration of semiconductor devices, the temperature in semiconductor integrated circuits is also getting higher and higher, and the polysilicon resistance will have a high temperature due to the self-heating effect when it is working.

Since the polysilicon material changes with temperature, when the polysilicon resistor is working, the resistance value of the corresponding polysilicon resistor will change accordingly, making the electrical characteristics of the integrated circuit unstable

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