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A method for preparing lutetium disilicate scintillation film doped with cerium

A technology of lutetium pyrosilicate and thin film, which is applied in the field of scintillation thin film material preparation, can solve the problems of weak bonding force between thin film and substrate, difficult preparation, thin film cracking, etc., and achieve the effect of simple operation, uniform thin film and firm combination

Active Publication Date: 2016-03-23
江苏先进无机材料研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the sol-gel combined dipping and pulling method also has its own defects, such as: multiple dipping and pulling are required, the bonding force between the film and the substrate is weak, it is difficult to prepare thicker films such as films of tens of microns, and high temperature heat treatment It is easy to cause cracks in the film, etc.

Method used

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  • A method for preparing lutetium disilicate scintillation film doped with cerium
  • A method for preparing lutetium disilicate scintillation film doped with cerium
  • A method for preparing lutetium disilicate scintillation film doped with cerium

Examples

Experimental program
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Effect test

Embodiment 1

[0034] 1. Select a P-type (100) single crystal silicon wafer, cut it into squares with an area of ​​25.4mm×25.4mm, and then ultrasonically clean it with acetone, alcohol, and deionized water for 20 minutes at room temperature, and then dry it; then soak it in 5wt% hydrofluoric acid aqueous solution for 2 minutes to remove the oxide layer on the surface of the silicon wafer, and then wash it with deionized water and alcohol for about 3 times.

[0035] 2. Put the pretreated single crystal silicon chip into the mixed aqueous solution A composed of hydrofluoric acid and silver nitrate and etch for 60 seconds, so that a layer of Ag particles is uniformly deposited on the surface of the silicon chip. The molar concentrations of hydrofluoric acid and silver nitrate in aqueous solution A are 4.8mol / L and 0.005mol / L respectively; after washing with deionized water and alcohol, put the mixed aqueous solution B composed of hydrofluoric acid and hydrogen peroxide Etching was carried out a...

Embodiment 2

[0039] 1. Select a P-type (100) single crystal silicon wafer, cut it into squares with an area of ​​25.4mm×25.4mm, and then ultrasonically clean it with acetone, alcohol, and deionized water for 20 minutes at room temperature, and then dry it; then soak it in 5wt% hydrofluoric acid aqueous solution for 2 minutes to remove the oxide layer on the surface of the silicon wafer, and then wash it with deionized water and alcohol for about 3 times.

[0040] 2. Put the pretreated single crystal silicon chip into the mixed aqueous solution A composed of hydrofluoric acid and silver nitrate and etch for 60 seconds, so that a layer of Ag particles is uniformly deposited on the surface of the silicon chip. The molar concentrations of hydrofluoric acid and silver nitrate in aqueous solution A are 4.8mol / L and 0.005mol / L respectively; after washing with deionized water and alcohol, put the mixed aqueous solution B composed of hydrofluoric acid and hydrogen peroxide At 50°C, etch for 30 minu...

Embodiment 3

[0044] 1. Select a P-type (100) single crystal silicon wafer, cut it into squares with an area of ​​25.4mm×25.4mm, and then ultrasonically clean it with acetone, alcohol, and deionized water for 20 minutes at room temperature, and then dry it; then soak it in 5wt% hydrofluoric acid aqueous solution for 2 minutes to remove the oxide layer on the surface of the silicon wafer, and then wash it with deionized water and alcohol for about 3 times.

[0045] 2. Put the pretreated single crystal silicon chip into the mixed aqueous solution A composed of hydrofluoric acid and silver nitrate and etch for 60 seconds, so that a layer of Ag particles is uniformly deposited on the surface of the silicon chip. The molar concentrations of hydrofluoric acid and silver nitrate in aqueous solution A are 4.8mol / L and 0.005mol / L respectively; after washing with deionized water and alcohol, put the mixed aqueous solution B composed of hydrofluoric acid and hydrogen peroxide At 50°C, etch for 30 minu...

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Abstract

The invention discloses a preparation method for a cerium doped lutetium pyrosilicate scintillating film. The method comprises the steps of: a) conducting surface cleaning and oxide layer removal pretreatment on a monocrystalline silicon sheet; b) etching a lot of pores on the surface of the pretreated monocrystalline silicon sheet obtained in step a) by a chemical etching technique; c) placing the monocrystalline silicon sheet etched with a lot of pores on the surface in step b) into a CexLu1-x(NO3)3 acetic acid solution, conducting impregnation for 8-12h at 25-60DEG C, and then performing drying for standby use, with the x in CexLu1-x(NO3)3 ranging from 0.001 to 0.040; and d) subjecting the monocrystalline silicon sheet obtained in step c) to heat treatment at 1000-1200DEG C for 2-4h in an inert atmosphere. The method provided by the invention can realize low-cost and large-area preparation of the cerium doped lutetium pyrosilicate scintillating film through simple operation. With a thickness up to 30-60micrometers, the film can firmly bond with a substrate. Thus, the method has application prospects.

Description

technical field [0001] The invention relates to a method for preparing a cerium-doped lutetium disilicate scintillation film, in particular to a method for preparing a cerium-doped lutetium disilicate scintillation film by combining a metal-catalyzed direct chemical etching silicon method and a dip coating method The invention belongs to the technical field of scintillation thin film material preparation. Background technique [0002] In 2000, it was discovered that cerium-doped lutetium disilicate (Lu 2 Si 2 o 7 : Ce 3+ , abbreviated as LPS:Ce 3+ ) crystals have high light output (about 13000-22000Ph / MeV), and the fluorescence decay time is short (38ns), more importantly, there is no afterglow, and the energy resolution is good (9%), so the scintillation performance is excellent, and at the same time , LPS:Ce 3+ Excellent chemical stability and high temperature stability, no deliquescence, high mechanical strength, therefore, lutetium disilicate doped with cerium (LPS...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C26/00G21K4/00
Inventor 刘光辉杨华刘茜魏钦华周真真卢琦
Owner 江苏先进无机材料研究院