Manufacturing method of surface-plasmon-enhanced GaN-based nanopore LED

Abstract

A manufacturing method of a surface-plasmon-enhanced GaN-based nanopore LED includes the following steps of firstly, sequentially growing an n-type InAlGaN layer, a non-doped or doped multi-quantum-well layer, a p-type InAlGaN layer and a current expansion layer on a substrate; secondly, conducting downward etching on the current expansion layer into the n-type InAlGaN layer through a photo-etching and dry-etching process so that a GaN-based LED structure nanopore array can be formed; thirdly, conducting downward etching on the portion, located on one side of the GaN-based LED structure nanopore array, of the upper surface of the current expansion layer to form a tabletop, wherein the etching depth is larger than the depth of nanopores of the GaN-based LED structure nanopore array; fourthly, manufacturing a p electrode on part of the upper surface of the current expansion layer through a photo-etching, evaporating and adhesive tape stripping process; fifthly, manufacturing an n electrode on the tabletop; sixthly, filling the nanopores of the GaN-based LED structure nanopore array with multiple spherical metal nanometer particles with non-conductive film wrapping on the outer surfaces to form a nuclear shell metal nanometer spherical layer, and completing manufacturing.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to a method for preparing a surface plasmon-enhanced GaN-based nanohole LED. Background technique [0002] Because light-emitting diodes have the advantages of energy saving, environmental protection, long life, and fast response speed, in the next few years, light-emitting diodes may replace traditional lighting fixtures such as incandescent lamps and fluorescent lamps, and enter thousands of households. However, the low luminous efficiency of light-emitting diodes has become a major bottleneck in its development, especially green and ultraviolet light-emitting diodes. [0003] The main methods commonly used to improve the luminous efficiency of light-emitting diodes are: substrate patterning, active layer structure optimization, surface roughening, photonic crystals, etc. Surface plasmon resonance enhancement technology can improve the spontaneous e...

AI Technical Summary

Problems solved by technology

The first method is to deposit a layer of metal film or metal particles at the position of tens of nanometers on the quantum hydrazine during the growth of the epitaxial wafer to generate surface plasmon coupling. The quality of material growth in this method is not high, especially It is difficult to avoid the diffusion of metal to quantum hydrazine; the second method is to reduce the thickness of p-GaN to achieve the surface plasmon coupling distance, such as depositing a metal film or metal particles after preparing a nanopillar array. This method has cumbersome process steps. The obtained LED has a large turn-on voltage, and the loss after surface plasmon coupling is large, so it is difficult to achieve a substantial increase in luminous efficiency

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